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<p>A β-gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) thin film was deposited on a silicon (Si) substrate using an e-beam evaporator for photodetector applications. The device exhibited rectifying properties and had a dark current of 59 pA. Under illumination, the device demonstrated sensitivity to light with a short-circuit current and an open-circuit voltage of 42 nA and 0.36&#xa0;V, respectively, demonstrating its capabilities as a self-powered photodetector. The device showed good stability and repeatability with a rise and fall time of 1.18 and 1.86&#xa0;s, respectively. The photocurrent response exhibited a strong intensity-dependent behavior with good linearity. In addition, the device showed a responsivity of 74.3&#xa0;mA/W with an external quantum efficiency value of 27.9% at 330&#xa0;nm (0&#xa0;V). Furthermore, the device demonstrates the detectivity of 1.71 × 10<sup>13</sup> Jones, and the noise equivalent power was 5.86 × 10<sup>–14</sup> W/Hz<sup>1/2</sup>. These results highlight the potential of β-Ga<sub>2</sub>O<sub>3</sub><b>/</b>SiO<sub>2</sub> heterostructure for efficient self-powered UV detection.</p>

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Self-powered UV photodetection using an interface-engineered β-Ga2O3/amorphous-SiO2 thin-film heterostructure

  • 期刊论文

  • 发表日期：

    2026年6月29日

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  • Zakia Hassan Alhashem,
  • Mir Waqas Alam

摘要

A β-gallium oxide (Ga2O3) thin film was deposited on a silicon (Si) substrate using an e-beam evaporator for photodetector applications. The device exhibited rectifying properties and had a dark current of 59 pA. Under illumination, the device demonstrated sensitivity to light with a short-circuit current and an open-circuit voltage of 42 nA and 0.36 V, respectively, demonstrating its capabilities as a self-powered photodetector. The device showed good stability and repeatability with a rise and fall time of 1.18 and 1.86 s, respectively. The photocurrent response exhibited a strong intensity-dependent behavior with good linearity. In addition, the device showed a responsivity of 74.3 mA/W with an external quantum efficiency value of 27.9% at 330 nm (0 V). Furthermore, the device demonstrates the detectivity of 1.71 × 1013 Jones, and the noise equivalent power was 5.86 × 10–14 W/Hz1/2. These results highlight the potential of β-Ga2O3/SiO2 heterostructure for efficient self-powered UV detection.