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<p>We report a systematic study of MoO<sub><i>x</i></sub>/<i>n</i>-Si heterojunctions fabricated on Si substrates with different surface treatments, including HF etching and Si nanowire formation. Electrical characterization revealed that the surface modifications significantly influence series resistance, rectification ratio, and quantum efficiency of the devices. HF etching improved device performance by removing native oxide and passivating the surface. MoO<sub><i>x</i></sub>/<i>n</i>-Si nanowire-based heterostructures exhibited the best performance, combining low series resistance and a high rectification ratio (<i>k</i> = 6.3&#xa0;×&#xa0;10<sup>3</sup>). Capacitance–voltage and Mott–Schottky analysis indicated uniform doping in untreated and HF-etched Si, while nanostructured samples showed increased surface state densities (~ 10<sup>12</sup>&#xa0;cm<sup>−2</sup>). These findings highlight the critical role of interface chemistry and surface morphology in controlling charge transport and recombination, providing guidelines for optimizing MoO<sub><i>x</i></sub>/Si heterojunctions for photovoltaic and optoelectronic applications.</p>

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Electrical characteristics of MoOx/silicon nanowire heterojunctions

  • 期刊论文

  • 发表日期：

    2026年6月23日

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  • Mykhailo M. Solovan,
  • Sanjay Sahare,
  • Andriy I. Mostovyi,
  • Hryhorii P. Parkhomenko,
  • Viktor V. Brus

摘要

We report a systematic study of MoOx/n-Si heterojunctions fabricated on Si substrates with different surface treatments, including HF etching and Si nanowire formation. Electrical characterization revealed that the surface modifications significantly influence series resistance, rectification ratio, and quantum efficiency of the devices. HF etching improved device performance by removing native oxide and passivating the surface. MoOx/n-Si nanowire-based heterostructures exhibited the best performance, combining low series resistance and a high rectification ratio (k = 6.3 × 103). Capacitance–voltage and Mott–Schottky analysis indicated uniform doping in untreated and HF-etched Si, while nanostructured samples showed increased surface state densities (~ 1012 cm−2). These findings highlight the critical role of interface chemistry and surface morphology in controlling charge transport and recombination, providing guidelines for optimizing MoOx/Si heterojunctions for photovoltaic and optoelectronic applications.