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<p>In this work, copper-silver-selenium-tellurium (CuAgSe<sub>0.5</sub>Te<sub>0.5</sub>) thin films were successfully deposited using electron beam deposition. Furthermore, X-ray diffraction characterization revealed a polycrystalline monoclinic structure for all CuAgSe<sub>0.5</sub>Te<sub>0.5</sub> thin films. The optical parameters of the CuAgSe<sub>0.5</sub>Te<sub>0.5</sub> thin films were calculated by the Swanepoel procedure. Optical characterization indicated that the extinction coefficient and refractive index (n) of the CuAgSe<sub>0.5</sub>Te<sub>0.5</sub> films increased with increasing thickness. Consequently, the dispersion energy, single oscillator energy, and static refractive index were determined as a function of the thickness of the CuAgSe<sub>0.5</sub>Te<sub>0.5</sub> films. Additionally, Optical analysis indicated that the films possess a direct band gap (<i>E</i><sub>g</sub>), which narrowed from 1.47 to 1.39 eV as the film thickness increased. On the other hand, the absorption coefficient is calculated from the transmission data at the fundamental absorption edge. Furthermore, an extensive study was conducted on dielectric characteristics, including the complex dielectric parameter, dielectric loss, and quality factor. The study also explored the nonlinear optical constants and optical conductivity of the CuAgSe<sub>0.5</sub>Te<sub>0.5</sub> films, which increased with increasing layer thickness. The results suggest that CuAgSe<sub>0.5</sub>Te<sub>0.5</sub> films are a good absorber layer for solar cell applications. Also, the electrical analysis of the Al/n-Si/p-CuAgSe<sub>0.5</sub>Te<sub>0.5</sub>/Al heterojunction revealed improved diode characteristics with increasing temperature. Specifically, the ideality factor reduced from 2.13 to 1.58, the barrier height increased from 0.83 eV to 0.91 eV, and the rectification ratio improved with increasing temperature.</p>

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Intensive studies on structural, optical, and current transport properties of CuAgSe0.5Te0.5 thin films and Al/n-Si/p-CuAgSe0.5Te0.5/Al heterojunction

  • 期刊论文

  • 发表日期：

    2026年6月23日

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  • M. A. Ibrahem,
  • I. M. Elradaf,
  • Ahmed Saeed Hassanien

摘要

In this work, copper-silver-selenium-tellurium (CuAgSe0.5Te0.5) thin films were successfully deposited using electron beam deposition. Furthermore, X-ray diffraction characterization revealed a polycrystalline monoclinic structure for all CuAgSe0.5Te0.5 thin films. The optical parameters of the CuAgSe0.5Te0.5 thin films were calculated by the Swanepoel procedure. Optical characterization indicated that the extinction coefficient and refractive index (n) of the CuAgSe0.5Te0.5 films increased with increasing thickness. Consequently, the dispersion energy, single oscillator energy, and static refractive index were determined as a function of the thickness of the CuAgSe0.5Te0.5 films. Additionally, Optical analysis indicated that the films possess a direct band gap (Eg), which narrowed from 1.47 to 1.39 eV as the film thickness increased. On the other hand, the absorption coefficient is calculated from the transmission data at the fundamental absorption edge. Furthermore, an extensive study was conducted on dielectric characteristics, including the complex dielectric parameter, dielectric loss, and quality factor. The study also explored the nonlinear optical constants and optical conductivity of the CuAgSe0.5Te0.5 films, which increased with increasing layer thickness. The results suggest that CuAgSe0.5Te0.5 films are a good absorber layer for solar cell applications. Also, the electrical analysis of the Al/n-Si/p-CuAgSe0.5Te0.5/Al heterojunction revealed improved diode characteristics with increasing temperature. Specifically, the ideality factor reduced from 2.13 to 1.58, the barrier height increased from 0.83 eV to 0.91 eV, and the rectification ratio improved with increasing temperature.