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<p>Al/F8T2/n-Si hybrid photodiodes were fabricated by spin-coating poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) onto phosphorus-doped n-type silicon substrates, followed by aluminum contact deposition. Structural analyses confirmed continuous, largely amorphous F8T2 films with strong visible absorption and an optical band gap of 2.19 eV. Electrical and photoresponse measurements revealed pronounced photocurrent generation, with responsivity, specific detectivity, and external quantum efficiency strongly dependent on illumination intensity and wavelength. The devices exhibited responsivity values of up to 1.38 A W<sup>−1</sup> and a specific detectivity of 4.36 × 10<sup>10</sup> Jones under 20 mW/cm<sup>2</sup> light illumination. Moreover, the photodetector properties and self-powered operation capability of the device were evaluated in the UV–Vis–NIR region over the wavelength range of 351–1600 nm, where the device demonstrated moderate photodetection performance. Transient photocurrent studies yielded rise and fall times of 586 ms and 571 ms, consistent with trap-controlled transport in the organic layer. The favorable energy-level alignment of F8T2 with Si enables enhanced sensitivity, stable barrier characteristics, and balanced spectral response. These findings highlight Al/F8T2/n-Si hybrid photodiodes as promising candidates for reliable broadband light detection spanning the visible-to-near-infrared spectrum, making them highly suitable for applications, such as ambient light monitoring, solar energy tracking, and low-frequency optoelectronic switching.</p>

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Illumination‑dependent optoelectronic performance of F8T2‑modified hybrid photodiodes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月18日

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  • Muharrem Gökçen,
  • Dilber Esra Yıldız,
  • Ali Akbar Hussaini,
  • Bayram Gündüz,
  • Murat Yıldırım

摘要

Al/F8T2/n-Si hybrid photodiodes were fabricated by spin-coating poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) onto phosphorus-doped n-type silicon substrates, followed by aluminum contact deposition. Structural analyses confirmed continuous, largely amorphous F8T2 films with strong visible absorption and an optical band gap of 2.19 eV. Electrical and photoresponse measurements revealed pronounced photocurrent generation, with responsivity, specific detectivity, and external quantum efficiency strongly dependent on illumination intensity and wavelength. The devices exhibited responsivity values of up to 1.38 A W−1 and a specific detectivity of 4.36 × 1010 Jones under 20 mW/cm2 light illumination. Moreover, the photodetector properties and self-powered operation capability of the device were evaluated in the UV–Vis–NIR region over the wavelength range of 351–1600 nm, where the device demonstrated moderate photodetection performance. Transient photocurrent studies yielded rise and fall times of 586 ms and 571 ms, consistent with trap-controlled transport in the organic layer. The favorable energy-level alignment of F8T2 with Si enables enhanced sensitivity, stable barrier characteristics, and balanced spectral response. These findings highlight Al/F8T2/n-Si hybrid photodiodes as promising candidates for reliable broadband light detection spanning the visible-to-near-infrared spectrum, making them highly suitable for applications, such as ambient light monitoring, solar energy tracking, and low-frequency optoelectronic switching.