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<p>The current work focused on the study of electronic and magnetotransport phenomena in the ternary topological insulators Bi<sub>2</sub>Te<sub>2</sub>Se and Bi<sub>2</sub>TeSe<sub>2.</sub> Powder XRD confirmed the formation of the rhombohedral phase with the space group R-3&#xa0;m. Resistivity vs. temperature measurements over 2-300&#xa0;K revealed the insulating nature of Bi<sub>2</sub>Te<sub>2</sub>Se. Its resistivity increased more than 70-fold from 249.55 μΩm at 300&#xa0;K to 17,554.02 μΩm at 2&#xa0;K, making it a sample with highly insulating bulk states, thus favourable for the topological surface states to manifest in transport. Bi<sub>2</sub>TeSe<sub>2</sub> showed metallic behaviour, with resistivity increasing with temperature. The upturn in resistivity in Bi<sub>2</sub>TeSe<sub>2</sub> below 40&#xa0;K is suggestive of electron–electron interaction. Weak antilocalization (WAL) was observed in the magnetoconductivity (MC) of these samples. The Hikami–Larkin–Nagaoka model was fitted to magnetoconductivity data to estimate weak antilocalization quantitatively. The coherence length <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(l_{\varphi }\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>l</mi> <mi>φ</mi> </msub> </math></EquationSource> </InlineEquation> was observed to reach 291.83 nm in Bi<sub>2</sub>TeSe<sub>2,</sub> substantially higher than previously reported values.</p>

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High-field magnetoresistance and weak antilocalization phenomena in Bi2Te2Se and Bi2TeSe2 single crystals

  • 期刊论文

  • 发表日期：

    2026年6月26日

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  • Nabarun Bera,
  • Sachin Sharma,
  • Nisha Yadav,
  • M. D. Anoop,
  • Deepika Kanwar,
  • Ayush R. Mokashi,
  • Hemant Singh,
  • Sandeep Gupta,
  • Balram Tripathi,
  • Dinesh K. Shukla,
  • Subhayan Mandal,
  • Manoj Kumar

摘要

The current work focused on the study of electronic and magnetotransport phenomena in the ternary topological insulators Bi2Te2Se and Bi2TeSe2. Powder XRD confirmed the formation of the rhombohedral phase with the space group R-3 m. Resistivity vs. temperature measurements over 2-300 K revealed the insulating nature of Bi2Te2Se. Its resistivity increased more than 70-fold from 249.55 μΩm at 300 K to 17,554.02 μΩm at 2 K, making it a sample with highly insulating bulk states, thus favourable for the topological surface states to manifest in transport. Bi2TeSe2 showed metallic behaviour, with resistivity increasing with temperature. The upturn in resistivity in Bi2TeSe2 below 40 K is suggestive of electron–electron interaction. Weak antilocalization (WAL) was observed in the magnetoconductivity (MC) of these samples. The Hikami–Larkin–Nagaoka model was fitted to magnetoconductivity data to estimate weak antilocalization quantitatively. The coherence length \(l_{\varphi }\) l φ was observed to reach 291.83 nm in Bi2TeSe2, substantially higher than previously reported values.