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<p>In light of the growing demand for autonomous sensing technologies driven by the Internet of Things and wearable electronics, there is an increasingly urgent need for the development of high-performance self-powered photodetectors. Bismuth ferrite, with its unique narrow bandgap and robust ferroelectric photovoltaic effect, has emerged as a promising material for the next-generation optoelectronic devices. This study presents a novel device architecture for a self-powered photodetector on the basis of (Dy, Ni)-gradient-doped BiFeO<sub>3</sub> multilayer film. This self-powered photodetector demonstrated exceptional photoelectric performance, with a responsivity of 1.5&#xa0;mA/W and a detectivity of 9.85 × 10<sup>9</sup> Jones. An underlying mechanism was proposed herein that the gradient doping establishes a spatial variation in the distribution of oxygen vacancies, which triggers the coupling effect of the oxygen vacancy gradient field and Schottky barrier field. This synergistic interaction significantly facilitates the separation and transport of photo-generated carriers, thereby enhancing the device performance. The findings in the paper not only provide a strategy for optimizing BiFeO<sub>3</sub>-based optoelectronics but also offer significant insights into the development of self-sustained and integrated sensing nodes.</p>

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Enhancing the performance of self-powered BiFeO3-based photodetectors through the coupling effect between gradient electric field and Schottky barrier potential

  • 期刊论文

  • 发表日期：

    2026年6月1日

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  • Youxin Yuanfeng,
  • Jie Wei,
  • Chunfang Wu,
  • Zehao Sun,
  • Xuyu Shen,
  • Shuyou Li,
  • Jingping Wang,
  • Bing Chen

摘要

In light of the growing demand for autonomous sensing technologies driven by the Internet of Things and wearable electronics, there is an increasingly urgent need for the development of high-performance self-powered photodetectors. Bismuth ferrite, with its unique narrow bandgap and robust ferroelectric photovoltaic effect, has emerged as a promising material for the next-generation optoelectronic devices. This study presents a novel device architecture for a self-powered photodetector on the basis of (Dy, Ni)-gradient-doped BiFeO3 multilayer film. This self-powered photodetector demonstrated exceptional photoelectric performance, with a responsivity of 1.5 mA/W and a detectivity of 9.85 × 109 Jones. An underlying mechanism was proposed herein that the gradient doping establishes a spatial variation in the distribution of oxygen vacancies, which triggers the coupling effect of the oxygen vacancy gradient field and Schottky barrier field. This synergistic interaction significantly facilitates the separation and transport of photo-generated carriers, thereby enhancing the device performance. The findings in the paper not only provide a strategy for optimizing BiFeO3-based optoelectronics but also offer significant insights into the development of self-sustained and integrated sensing nodes.