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<p>This study investigated the effects of post-deposition annealing (PDA) on improving the electrical performance of AlN/4H-SiC Schottky barrier diodes (SBDs). This study evaluated three variants: Device A (without PDA), Device B (annealed at 600 °C), and Device C (annealed at 1200 °C). The results indicated that high-temperature PDA markedly improved the crystallinity of AlN, reduced oxygen vacancy concentrations, and enhanced n-type behavior, which are critical for diode performance. Device C exhibited a remarkable reduction in specific on-resistance (<i>R</i><sub>on,sp</sub>) to 0.66 Ω·cm<sup>2</sup> and an increased breakdown voltage (BV) of 2.3&#xa0;kV, compared to Device A and Device B. Furthermore, Device C demonstrated a lower interface state density (N<sub>SS</sub>) at the AlN/4H-SiC interface than both Device A and Device B, indicating improved interface quality due to the high-temperature PDA. These findings underscored the effectiveness of PDA-assisted interface engineering in enhancing the electrical and thermal characteristics of AlN/4H-SiC SBDs, positioning them as promising candidates for high-efficiency power electronics applications. The integration of these advanced techniques could have led to significant advancements in the performance of semiconductor devices.</p>

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Post-deposition annealing-driven interface engineering in sputtered AlN films on 4H-SiC substrate for enhanced electrical performance

  • 期刊论文

  • 发表日期：

    2026年6月24日

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  • Ye-Jin Kim,
  • Chowdam Venkata Prasad,
  • Ji-Hyun Kim,
  • Chang-Jun Park,
  • Seung-Hyun Park,
  • Carl-Mikael Zetterling,
  • Sang-Mo Koo

摘要

This study investigated the effects of post-deposition annealing (PDA) on improving the electrical performance of AlN/4H-SiC Schottky barrier diodes (SBDs). This study evaluated three variants: Device A (without PDA), Device B (annealed at 600 °C), and Device C (annealed at 1200 °C). The results indicated that high-temperature PDA markedly improved the crystallinity of AlN, reduced oxygen vacancy concentrations, and enhanced n-type behavior, which are critical for diode performance. Device C exhibited a remarkable reduction in specific on-resistance (Ron,sp) to 0.66 Ω·cm2 and an increased breakdown voltage (BV) of 2.3 kV, compared to Device A and Device B. Furthermore, Device C demonstrated a lower interface state density (NSS) at the AlN/4H-SiC interface than both Device A and Device B, indicating improved interface quality due to the high-temperature PDA. These findings underscored the effectiveness of PDA-assisted interface engineering in enhancing the electrical and thermal characteristics of AlN/4H-SiC SBDs, positioning them as promising candidates for high-efficiency power electronics applications. The integration of these advanced techniques could have led to significant advancements in the performance of semiconductor devices.