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<p>BaZr<sub>1−<i>x</i></sub>Ti<sub><i>x</i></sub>O<sub>3</sub> is one of the most promising materials to replace lead-based materials in energy storage applications and has garnered significant attention. How to further enhance its energy storage performance remains a hot research topic. Herein, Ba<sub>1−<i>x</i></sub>La<sub><i>x</i></sub>Zr<sub>0.35</sub>Ti<sub>0.65</sub>O<sub>3</sub> (BZT<sub>35−<i>x</i></sub>La) (<i>x</i> = 0, 0.01, 0.03, 0.05, 0.07) ferroelectric thin films were synthesized on Pt/Ti/SiO<sub>2</sub>/Si substrates via the sol–gel method. It was found that the incorporation of La<sup>3+</sup> into the film resulted in an enhancement of its density, consequently leading to an increase in the film’s breakdown field strength. Meanwhile, additional electrons were generated by La<sup>3+</sup> replacing Ba<sup>2+</sup>, which inhibited the generation of oxygen vacancies and reduced the leakage current. When the La<sup>3+</sup> doping content increased to 0.05, the breakdown field of the film reached 5.23 MV/cm, representing a 46% increase compared to the BZT35 thin film. Ultimately, the films achieved higher energy storage density (<i>W</i><sub>rec</sub> = 32.4 J/cm<sup>3</sup>) and efficiency (<i>η</i> = 89.7%) due to the increase in breakdown field strength. The obtained results suggested that the incorporation of appropriate elements was an effective strategy for enhancing the energy storage capabilities of BZT35 thin films.</p>

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Effect of La doping on the energy storage performance of ferroelectric BaZr0.35Ti0.65O3 thin films

  • 期刊论文

  • 发表日期：

    2026年5月29日

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  • Yinjian Zhang,
  • Zheng Sun,
  • Zhengfei Yu,
  • Haiyan Wang,
  • Yemei Han,
  • Lingxia Li,
  • Fang Wang,
  • Kai Hu,
  • Kailiang Zhang

摘要

BaZr1−xTixO3 is one of the most promising materials to replace lead-based materials in energy storage applications and has garnered significant attention. How to further enhance its energy storage performance remains a hot research topic. Herein, Ba1−xLaxZr0.35Ti0.65O3 (BZT35−xLa) (x = 0, 0.01, 0.03, 0.05, 0.07) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates via the sol–gel method. It was found that the incorporation of La3+ into the film resulted in an enhancement of its density, consequently leading to an increase in the film’s breakdown field strength. Meanwhile, additional electrons were generated by La3+ replacing Ba2+, which inhibited the generation of oxygen vacancies and reduced the leakage current. When the La3+ doping content increased to 0.05, the breakdown field of the film reached 5.23 MV/cm, representing a 46% increase compared to the BZT35 thin film. Ultimately, the films achieved higher energy storage density (Wrec = 32.4 J/cm3) and efficiency (η = 89.7%) due to the increase in breakdown field strength. The obtained results suggested that the incorporation of appropriate elements was an effective strategy for enhancing the energy storage capabilities of BZT35 thin films.