Interfacial origin of colossal dielectric constant in Ti02: ZrO2 nanocomposite film
摘要
Nanocomposite thin films of TiO2: ZrO2 (~ 60:40 At.%) were synthesized using chemical beam vapor deposition (CBVD) on TiN- coated silicon substrates. The dielectric behavior of these films was investigated using a sputtered gold (Au) top electrode and compared with previously reported measurements using a silver (Ag) top electrode from the same deposition batch. While the film with the Ag top electrode exhibited moderately enhanced dielectric properties, the film with the Au top electrode showed a remarkable increase, achieving a colossal dielectric constant of ~ 5000 at 2 Hz. Comprehensive electrical characterization, including impedance spectroscopy, dielectric loss, AC conductivity, and current–voltage (I-V) measurements, suggests that this enhanced dielectric response is dominated by Maxwell–Wagner-type interfacial polarization and Schottky-type barrier effects at the Au/oxide interface. The results indicate that the observed colossal dielectric behavior is governed primarily by extrinsic electrode-film interfacial effects rather than intrinsic lattice contributions.These findings highlight the critical role of electrode engineering in tailoring dielectric performance and suggest that TiO2: ZrO2 nanocomposite thin films are promising candidates for high-κ dielectric layers and capacitor-type microelectronic applications.