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<p>This paper reports on the structural evolution and gamma radiation behavior of Al/Yb<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/p-Si MOS capacitors. Structural examinations using X-ray diffraction (XRD) verified that post-deposition annealing at 400&#xa0;°C crystallized the Yb<sub>2</sub>O<sub>3</sub> layer, resulting in a polycrystalline cubic phase with an average crystallite size of 8.86&#xa0;nm. Raman spectroscopy further highlighted the development of an interfacial silicate layer, which provides a graded transition effective at limiting interface trap density. Electrical analysis via Capacitance–Voltage (C–V) and Conductance–Voltage (G–V) techniques demonstrated that, unlike conventional SiO<sub>2</sub>-based devices, the Yb<sub>2</sub>O<sub>3</sub> dielectric exhibits a positive voltage shift under gamma exposure. This behavior indicates an anomalous buildup of net negative charge, attributed to deep electron traps may be associated with the reduction of Yb<sup>3</sup>⁺ ions. Leakage current analysis based on Poole–Frenkel and Fowler–Nordheim models confirmed that irradiation primarily reduced trap density without altering the dominant transport mechanisms. Low device sensitivity was measured to be 1.03&#xa0;mV/Gy after 160&#xa0;Gy exposure. Notably, radiation exposure at the investigated doses reduced the interface trap density and suppressed the gate leakage current, indicating that dual Yb<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> gate stacks can be promising candidates for radiation-tolerant MOS technologies.</p>

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Defect characterization and gamma radiation response of Al/Yb2O3/SiO2/p-Si MOS structures

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月28日

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  • Senol Kaya

摘要

This paper reports on the structural evolution and gamma radiation behavior of Al/Yb2O3/SiO2/p-Si MOS capacitors. Structural examinations using X-ray diffraction (XRD) verified that post-deposition annealing at 400 °C crystallized the Yb2O3 layer, resulting in a polycrystalline cubic phase with an average crystallite size of 8.86 nm. Raman spectroscopy further highlighted the development of an interfacial silicate layer, which provides a graded transition effective at limiting interface trap density. Electrical analysis via Capacitance–Voltage (C–V) and Conductance–Voltage (G–V) techniques demonstrated that, unlike conventional SiO2-based devices, the Yb2O3 dielectric exhibits a positive voltage shift under gamma exposure. This behavior indicates an anomalous buildup of net negative charge, attributed to deep electron traps may be associated with the reduction of Yb3⁺ ions. Leakage current analysis based on Poole–Frenkel and Fowler–Nordheim models confirmed that irradiation primarily reduced trap density without altering the dominant transport mechanisms. Low device sensitivity was measured to be 1.03 mV/Gy after 160 Gy exposure. Notably, radiation exposure at the investigated doses reduced the interface trap density and suppressed the gate leakage current, indicating that dual Yb2O3/SiO2 gate stacks can be promising candidates for radiation-tolerant MOS technologies.