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<p>Aluminum nitride (AlN) is a technologically important wide-bandgap semiconductor with excellent thermal conductivity, high dielectric strength, and promising applications in electronic, optoelectronic, and energy devices. In this work, AlN nanoparticles were synthesized via a solvothermal route in a specially designed stainless steel autoclave. The structural analysis confirmed the formation of cubic phase of AlN. Field emission scanning electron microscopy (FE-SEM) revealed nearly spherical nanoparticles with a tendency to form agglomerates. Selected area electron diffraction (SAED) analyses further confirmed the crystalline nature of the nanoparticles, diffraction patterns consistent with cubic AlN. Notably, the X-ray diffraction (XRD) pattern recorded after five months showed the retention of the cubic phase, indicating good structural stability of the synthesized AlN nanoparticles. Electrical transport measurements performed on AlN thin-film devices exhibited symmetric I–V characteristics with a pronounced increase in current at elevated temperatures, confirming semiconducting behavior. Temperature-dependent conductivity followed thermally activated transport, yielding an activation energy of ~ 0.665&#xa0;eV, indicating defect-assisted carrier conduction. These results demonstrate that the solvothermal method provides a simple and effective route for producing phase-stable cubic AlN nanostructures with well-defined electrical transport properties, making them promising candidates to explore further for electronic and energy device applications.</p>

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Nanostructured cubic AlN via solvothermal route: phase stability and electrical properties

  • 期刊论文

  • 发表日期：

    2026年5月27日

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  • Chhavi Jaswal,
  • Manjot Kaur,
  • Manish Kumar,
  • Akshay Kumar

摘要

Aluminum nitride (AlN) is a technologically important wide-bandgap semiconductor with excellent thermal conductivity, high dielectric strength, and promising applications in electronic, optoelectronic, and energy devices. In this work, AlN nanoparticles were synthesized via a solvothermal route in a specially designed stainless steel autoclave. The structural analysis confirmed the formation of cubic phase of AlN. Field emission scanning electron microscopy (FE-SEM) revealed nearly spherical nanoparticles with a tendency to form agglomerates. Selected area electron diffraction (SAED) analyses further confirmed the crystalline nature of the nanoparticles, diffraction patterns consistent with cubic AlN. Notably, the X-ray diffraction (XRD) pattern recorded after five months showed the retention of the cubic phase, indicating good structural stability of the synthesized AlN nanoparticles. Electrical transport measurements performed on AlN thin-film devices exhibited symmetric I–V characteristics with a pronounced increase in current at elevated temperatures, confirming semiconducting behavior. Temperature-dependent conductivity followed thermally activated transport, yielding an activation energy of ~ 0.665 eV, indicating defect-assisted carrier conduction. These results demonstrate that the solvothermal method provides a simple and effective route for producing phase-stable cubic AlN nanostructures with well-defined electrical transport properties, making them promising candidates to explore further for electronic and energy device applications.