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<p>A resistive-type InGaN thin-film sensor was fabricated via parameter-controlled metal–organic chemical vapor deposition (MOCVD) for selective ppb-level nitric oxide (NO) detection at room temperature (25 ± 2&#xa0;°C). Structural characterizations confirmed the formation of high-crystallinity (FWHM = 154.81 arcsec) InGaN thin film with uniform elemental distribution, where In was incorporated with a concentration of ~ 13.55 at. %. Gas sensing tests demonstrated that the sensor exhibited superior trace NO sensing performance: 7.53% to 100&#xa0;ppb NO, and a low detection limit of 0.7&#xa0;ppb. The sensor showed moisture-enhanced sensing behavior, excellent selectivity against interfering gases, and long-term stability over 60&#xa0;days. The enhanced performance originates from In-induced band structure modulation, surface polarization effect, and high electron mobility of InGaN, which facilitate efficient charge transfer during NO adsorption. Notably, this sensor is directly fabricated by the MOCVD process, which circumvents the complexity associated with nanostructure synthesis typically encountered in conventional resistive sensors. In contrast to conventional gallium nitride (GaN)-based gas sensors, it exhibits distinct potential for large-scale practical deployment. This work provides a facile and scalable MOCVD fabrication strategy for high-performance GaN-based trace NO sensors, enabling practical applications in real-time trace NO monitoring.</p>

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InGaN thin-film sensor for selective ppb-level detection of NO gas at room temperature

  • 期刊论文

  • 发表日期：

    2026年5月25日

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  • Zhekai Zhang,
  • Shengbo Sang,
  • Yuxuan Wang,
  • Juxu Guang,
  • Donghui Li,
  • Zhengyang Jia,
  • Dan Han

摘要

A resistive-type InGaN thin-film sensor was fabricated via parameter-controlled metal–organic chemical vapor deposition (MOCVD) for selective ppb-level nitric oxide (NO) detection at room temperature (25 ± 2 °C). Structural characterizations confirmed the formation of high-crystallinity (FWHM = 154.81 arcsec) InGaN thin film with uniform elemental distribution, where In was incorporated with a concentration of ~ 13.55 at. %. Gas sensing tests demonstrated that the sensor exhibited superior trace NO sensing performance: 7.53% to 100 ppb NO, and a low detection limit of 0.7 ppb. The sensor showed moisture-enhanced sensing behavior, excellent selectivity against interfering gases, and long-term stability over 60 days. The enhanced performance originates from In-induced band structure modulation, surface polarization effect, and high electron mobility of InGaN, which facilitate efficient charge transfer during NO adsorption. Notably, this sensor is directly fabricated by the MOCVD process, which circumvents the complexity associated with nanostructure synthesis typically encountered in conventional resistive sensors. In contrast to conventional gallium nitride (GaN)-based gas sensors, it exhibits distinct potential for large-scale practical deployment. This work provides a facile and scalable MOCVD fabrication strategy for high-performance GaN-based trace NO sensors, enabling practical applications in real-time trace NO monitoring.