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<p>A lead-free hybrid perovskite solar cell based on methylammonium tin iodide has been studied using SCAPS-1D numerical simulation tool to understand its optoelectronic performance for pre-fabrication process. The ITO/PCBM/CH₃NH₃SnI₃/CuSCN solar cell consists of indium tin oxide (ITO) as the front contact, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as the electron transport layer (ETL), methylammonium tin iodide (CH₃NH₃SnI₃) as the absorber layer, and copper thiocyanate (CuSCN) as the hole transport layer (HTL). The material layer thickness has optimized to achieve enhanced light absorption and efficient charge carrier extraction. The simulation incorporates with reported optical properties of the materials to provide realistic device behavior. Under illumination condition, the device optimized structure shows an open-circuit voltage (V<sub>oc</sub>) of 0.97&#xa0;V, a short-circuit current density (J<sub>sc</sub>) of 31.68&#xa0;mA/cm<sup>2</sup>, a fill factor (FF) of 83.34%, and a power conversion efficiency of 25.66%. The impact of key parameters like material defect density, junction defects, operating temperature, and parasitic resistances has also been demonstrated to evaluate stability of device performance.</p>

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Simulation of a high-efficiency lead-free ITO/PCBM/CH3NH3SnI3/CuSCN solar cell using SCAPS-1D

  • 期刊论文

  • 发表日期：

    2026年5月23日

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  • T. Keerthi Priya,
  • Prasenjit Deb

摘要

A lead-free hybrid perovskite solar cell based on methylammonium tin iodide has been studied using SCAPS-1D numerical simulation tool to understand its optoelectronic performance for pre-fabrication process. The ITO/PCBM/CH₃NH₃SnI₃/CuSCN solar cell consists of indium tin oxide (ITO) as the front contact, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as the electron transport layer (ETL), methylammonium tin iodide (CH₃NH₃SnI₃) as the absorber layer, and copper thiocyanate (CuSCN) as the hole transport layer (HTL). The material layer thickness has optimized to achieve enhanced light absorption and efficient charge carrier extraction. The simulation incorporates with reported optical properties of the materials to provide realistic device behavior. Under illumination condition, the device optimized structure shows an open-circuit voltage (Voc) of 0.97 V, a short-circuit current density (Jsc) of 31.68 mA/cm2, a fill factor (FF) of 83.34%, and a power conversion efficiency of 25.66%. The impact of key parameters like material defect density, junction defects, operating temperature, and parasitic resistances has also been demonstrated to evaluate stability of device performance.