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<p>In high-temperature applications, the performance reliability of indium tin oxide (ITO) thin films is significantly affected by their stability, which can be controlled by tuning the dopant concentration. In this study, Al doping significantly influenced the orientationg, composition, micromorphology, and high-temperature electrical stability of ITO thin films. In particular, with the sputtering power of the Al target set to 10 W, the carrier mobility, concentration, Seebeck coefficient, and resistivity all exhibited stable values at high annealing temperatures (800–1200&#xa0;°C), with resistivities in a range 3.1–17.1 μΩ m, indicating enhanced high-temperature stability of the ITO thin films. These results provide a strategy for tuning the stability of high-temperature thermocouples for harsh-environment applications.</p>

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Enhanced structural and electrical stability of nanostructured Al-doped ITO thin films at high temperatures

  • 期刊论文

  • 发表日期：

    2026年5月22日

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  • Sujie Wang,
  • Lili Cao,
  • Fei Luo,
  • Haitao Zhou,
  • Kexin Ma,
  • Qingyun Tian,
  • Jiyuan Shi,
  • Zhensong Li,
  • Bingwei Luo

摘要

In high-temperature applications, the performance reliability of indium tin oxide (ITO) thin films is significantly affected by their stability, which can be controlled by tuning the dopant concentration. In this study, Al doping significantly influenced the orientationg, composition, micromorphology, and high-temperature electrical stability of ITO thin films. In particular, with the sputtering power of the Al target set to 10 W, the carrier mobility, concentration, Seebeck coefficient, and resistivity all exhibited stable values at high annealing temperatures (800–1200 °C), with resistivities in a range 3.1–17.1 μΩ m, indicating enhanced high-temperature stability of the ITO thin films. These results provide a strategy for tuning the stability of high-temperature thermocouples for harsh-environment applications.