<p>Aluminium-doped zinc oxide (AZO) thin films with thickness of ~ 450 ± 12&#xa0;nm were deposited on soda lime (SL) glass and ITO substrates by DC sputtering and subsequently irradiated with 2&#xa0;MeV Ar⁸⁺ ions at fluences of 5 × 10¹⁴, 7 × 10¹⁴, 1 × 10¹⁵, 3 × 10¹⁵, and 5 × 10¹⁵ ions/cm² to investigate irradiation-induced property modification. Structural, morphological, optical, and electrical characteristics of both pristine and irradiated films were systematically analysed. X-ray diffraction revealed fluence-dependent structural evolution. For films on glass substrates, the (100) orientation dominated initially, weakened at the lowest fluence due to irradiation-induced disorder, and recovered at higher fluences, with the (101) plane becoming prominent at intermediate fluences. In contrast, AZO films on ITO largely retained the (100) preferred orientation, except at the highest fluence, indicating partial disruption of the wurtzite structure. FESEM analysis showed randomly distributed rod-like features in as-deposited films. Initial irradiation led to rod agglomeration caused by localized thermal effects, while higher fluences resulted in thinner rods and eventual transformation into wire-like morphologies. Optical studies revealed enhanced transmittance after irradiation, reaching ~ 95% at 1 × 10¹⁵ ions/cm² for ITO-supported films, followed by degradation at the highest fluence due to defect formation. Hall measurements confirmed increased carrier concentration and improved conductivity after irradiation. Overall, AZO films on ITO substrates exhibit superior optical transparency and electrical performance, highlighting their potential for transparent conducting and optoelectronic applications.</p>