Coupling between normal and anomalous dielectric response and enhanced ferroelectric–magnetic polarization in BZT thin films
摘要
This research work makes use of the chemical bath deposition (CBD) technique to create thin films of BaZrxTi1-xO3 (x = 0.0 to 0.12). Alternatively, the experimental data is correlated with theoretical values using the BAND tool in the Amsterdam density functional (ADF) package. The temperature of the bath containing the 1.2 M solution was kept at 78 °C. When thin films are deposited in their as-deposited state, they exhibit amorphous behavior. However, when thin films are annealed at a temperature of 300 °C, they exhibit a BaTiO3 tetragonal Perovskite phase at x = 0.0 through 0.06, and phase change is detected at x = 0.08. At x = 0.08 to 0.12, the tetragonal phase of pure perovskite is seen in thin films of barium zirconate titanate (BZT). After annealing at 300 °C, a transmission of around ~ 84% with an optical direct band gap of 3.55 eV is determined for x = 0.12. We find that the experimental band gap values agree well with the theoretically obtained results. For x = 0.0 to 0.12, thin films of BaZrxTi1-xO3 exhibit normal-anomalous dielectric behavior. At x = 0.12, the dielectric constant is at its highest and the tangent loss is at its lowest. The largest values of spontaneous and remnant polarization are observed in samples with x = 0.12. Mixed para-ferromagnetic behavior is seen by thin films of BaZrxTi1-xO3 when x = 0. Alternatively, at x = 0.08–0.12, we see soft ferromagnetic behavior. Based on these results, CBD-grown BZT thin films have adjustable structural, dielectric, optical and magnetic characteristics, which bodes well for future multifunctional multipurpose electronic devices.