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<p>Tin oxide (SnO<sub>2</sub>), a prototypical wide-bandgap oxide semiconductor, has been extensively investigated for sensing applications owing to its robust chemical stability, low cost, and high surface reactivity. In this work, we report a simple and low-cost fabrication strategy based on an inverted chemically wet and dry (ICWD) technique integrated with the sol–gel process, developed in-house for controlled thin film growth. The SnO<sub>2</sub> films were deposited using a precisely regulated downward withdrawal rate of 2&#xa0;cm&#xa0;h<sup>−1</sup> for uniformity, followed by in situ annealing at 300&#xa0;°C for 1&#xa0;h in an inert atmosphere to minimize contamination. The structural analysis using grazing incidence X-ray diffraction (GIXRD) confirmed the successful phase formation and nanocrystalline characteristics of the as-prepared film. Furthermore, morphological and topographical examinations indicated the development of uniformly distributed, dense films with a nano-ranged average particle size, as supported by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) results. Energy-dispersive X-ray spectroscopy (EDAX) analysis confirmed the stoichiometric composition without detectable impurity segregation, while Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible (UV) spectroscopy validated the characteristic bonding and optical behavior of SnO<sub>2</sub>. The optical parameters such as skin depth, refractive index, and extinction coefficient (<i>k</i>) show pronounced variation in the ultraviolet (UV) region due to strong photon–electron interactions. Electrical measurements exhibit linear and symmetric current–voltage (<i>I–V</i>) characteristics passing through the origin, indicative of excellent film continuity and the establishment of ohmic contacts. These results demonstrate that SnO<sub>2</sub> thin films synthesized via the ICWD approach possess significant potential for electrochemical gas-sensing and semiconductor device applications.</p>

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The impact of topography and electrical properties on SnO2 thin film fabricated using the inverted chemically wet and dry (ICWD) technique

  • 期刊论文

  • 发表日期：

    2026年5月17日

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  • Harapriya Nayak,
  • Sushanta Kumar Kamilla

摘要

Tin oxide (SnO2), a prototypical wide-bandgap oxide semiconductor, has been extensively investigated for sensing applications owing to its robust chemical stability, low cost, and high surface reactivity. In this work, we report a simple and low-cost fabrication strategy based on an inverted chemically wet and dry (ICWD) technique integrated with the sol–gel process, developed in-house for controlled thin film growth. The SnO2 films were deposited using a precisely regulated downward withdrawal rate of 2 cm h−1 for uniformity, followed by in situ annealing at 300 °C for 1 h in an inert atmosphere to minimize contamination. The structural analysis using grazing incidence X-ray diffraction (GIXRD) confirmed the successful phase formation and nanocrystalline characteristics of the as-prepared film. Furthermore, morphological and topographical examinations indicated the development of uniformly distributed, dense films with a nano-ranged average particle size, as supported by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) results. Energy-dispersive X-ray spectroscopy (EDAX) analysis confirmed the stoichiometric composition without detectable impurity segregation, while Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible (UV) spectroscopy validated the characteristic bonding and optical behavior of SnO2. The optical parameters such as skin depth, refractive index, and extinction coefficient (k) show pronounced variation in the ultraviolet (UV) region due to strong photon–electron interactions. Electrical measurements exhibit linear and symmetric current–voltage (I–V) characteristics passing through the origin, indicative of excellent film continuity and the establishment of ohmic contacts. These results demonstrate that SnO2 thin films synthesized via the ICWD approach possess significant potential for electrochemical gas-sensing and semiconductor device applications.