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<p>Binary bismuth telluride (Bi<sub>2</sub>Te<sub>3</sub>) based thermoelectric materials often exhibit suboptimal performance near room temperature, limiting their application in refrigeration systems. In this study, we strategically reduced the Te content in binary Bi<sub>2</sub>Te<sub>3-<i>x</i></sub> to introduce Te vacancies, which generates electrons as majority carriers. However, under Te-deficient conditions, Bi atoms preferentially occupy Te sites, forming antisite defects. As the relative Bi content increases, these antisite defects effectively suppress the electron concentration. This dual defect engineering approach enables precise optimization of the carrier concentration to 1.25 × 10<sup>19</sup>&#xa0;cm<sup>−3</sup>, leading to a significant enhancement in room-temperature thermoelectric performance. This carrier concentration tuning shifted the temperature for the maximum <i>zT</i> from 350 to 280&#xa0;K. This work demonstrates a pathway for tailoring the thermoelectric performance of binary Bi<sub>2</sub>Te<sub>3</sub> towards lower operating temperatures and paves the way for its development in low-temperature thermoelectric applications.</p>

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Reducing the peak-zT temperature in binary Bi2Te3-x via defect engineering

  • 期刊论文

  • 发表日期：

    2026年5月13日

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  • Chuanrui Zhang,
  • Qingchen Han,
  • Mengran Chen,
  • Chuan Sun,
  • Yongbao Feng,
  • Shun Wan,
  • Peng-an Zong

摘要

Binary bismuth telluride (Bi2Te3) based thermoelectric materials often exhibit suboptimal performance near room temperature, limiting their application in refrigeration systems. In this study, we strategically reduced the Te content in binary Bi2Te3-x to introduce Te vacancies, which generates electrons as majority carriers. However, under Te-deficient conditions, Bi atoms preferentially occupy Te sites, forming antisite defects. As the relative Bi content increases, these antisite defects effectively suppress the electron concentration. This dual defect engineering approach enables precise optimization of the carrier concentration to 1.25 × 1019 cm−3, leading to a significant enhancement in room-temperature thermoelectric performance. This carrier concentration tuning shifted the temperature for the maximum zT from 350 to 280 K. This work demonstrates a pathway for tailoring the thermoelectric performance of binary Bi2Te3 towards lower operating temperatures and paves the way for its development in low-temperature thermoelectric applications.