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<p>The powder samples of rare earth, Gd doped ZnO were synthesized by a wet chemical solution method. Structural analysis showed that all the samples crystallize in the hexagonal wurtzite structure of ZnO along with the impurity phases associated with Gd. The crystallite sizes, estimated using the Debye–Scherrer and Williamson–Hall methods, were found to be in the ranges of 29.63–43.02&#xa0;nm and 31.64–56.81&#xa0;nm, respectively. The morphological features showed nearly hexagonal rectangular particles with few rod shaped particles. The 3% Gd-doped ZnO sample exhibited the highest dielectric constant at room temperature. The AC conductivity increased with the rise in both frequency and temperature, and it is well described by Jonscher’s power law. The 1 and 3% Gd doped ZnO follow non-overlapping small polaron tunneling model and 5% Gd doped ZnO follows overlapping large polaron tunneling model in the temperature range 250–350&#xa0;°C. The activation energies obtained from the Arhenious relation of DC conductivity are of ~ 0.203, 0.198 and 0.237&#xa0;eV for 1, 3 and 5% Gd doped ZnO samples, respectively. The 5% Gd-doped ZnO sample exhibits higher resistivity compared to the other samples. The Nyquist or Cole–Cole plots for impedance revealed major contribution of grain boundary toward the conduction.</p>

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Structural, morphological, frequency and temperature-dependent dielectric investigations of Gd3⁺-doped ZnO system

  • 期刊论文

  • 发表日期：

    2026年5月16日

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  • S. K. Satpathy,
  • U. K. Panigrahi,
  • S. Sahu,
  • R. Biswal,
  • P. Mallick

摘要

The powder samples of rare earth, Gd doped ZnO were synthesized by a wet chemical solution method. Structural analysis showed that all the samples crystallize in the hexagonal wurtzite structure of ZnO along with the impurity phases associated with Gd. The crystallite sizes, estimated using the Debye–Scherrer and Williamson–Hall methods, were found to be in the ranges of 29.63–43.02 nm and 31.64–56.81 nm, respectively. The morphological features showed nearly hexagonal rectangular particles with few rod shaped particles. The 3% Gd-doped ZnO sample exhibited the highest dielectric constant at room temperature. The AC conductivity increased with the rise in both frequency and temperature, and it is well described by Jonscher’s power law. The 1 and 3% Gd doped ZnO follow non-overlapping small polaron tunneling model and 5% Gd doped ZnO follows overlapping large polaron tunneling model in the temperature range 250–350 °C. The activation energies obtained from the Arhenious relation of DC conductivity are of ~ 0.203, 0.198 and 0.237 eV for 1, 3 and 5% Gd doped ZnO samples, respectively. The 5% Gd-doped ZnO sample exhibits higher resistivity compared to the other samples. The Nyquist or Cole–Cole plots for impedance revealed major contribution of grain boundary toward the conduction.