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<p>This study investigated the structural, microstructural and microwave dielectric properties of Zn-doped Mg<sub>2</sub>TiO<sub>4</sub> ceramics synthesized by high-energy ball milling (HEBM) technique. The X-ray diffraction patterns (XRD), coupled with Rietveld refinement, confirm the formation of single-phase Mg<sub>2</sub>TiO<sub>4</sub> ceramics, and the lattice parameters were measured. Microstructural characterization was carried out using a field emission scanning electron microscope (FE-SEM). The relative density, dielectric constant, and <i>Q</i> × <i>f</i><sub><i>o</i></sub> values increase gradually with increasing Zn<sup>2+</sup> content up to 0.05; beyond this concentration, all three parameters decrease, indicating an optimal Zn<sup>2+</sup> concentration of <i>x</i> = 0.05 for enhanced properties. A dense microstructure with a maximum relative density of approximately 98.2% was attained for the (Mg<sub>0.95</sub>Zn<sub>0.05</sub>)<sub>2</sub>TiO<sub>4</sub> ceramic, accompanied by a remarkable reduction in the sintering temperature from 1450 to 1300&#xa0;°C. By increasing the concentration of Zn content, the maximum <i>Q</i> × <i>f</i><sub><i>o</i></sub> value of the samples has exhibited a substantial enhancement from 125,000 (for <i>x</i> = 00) to 185,000&#xa0;GHz (<i>x</i> = 0.05). A precise combination of microwave dielectric performance parameters, (<i>ε</i><sub>r</sub> ≈ 15.6, <i>Q</i> × <i>f</i><sub><i>o</i></sub> = 185,000&#xa0;GHz at 8.24&#xa0;GHz) was procured for (Mg<sub>0.95</sub>Zn<sub>0.05</sub>)<sub>2</sub>TiO<sub>4</sub> sample sintered at 1300&#xa0;°C for 3&#xa0;h. The observed improvement can be linked to lattice distortions, increased specimen density, and uniform microstructural grain growth. These results indicate that, owing to its properties, the (Mg<sub>0.95</sub>Zn<sub>0.05</sub>)<sub>2</sub>TiO<sub>4</sub> ceramic is well-suited for use in low-loss, ultra-high-frequency applications, making it promising for 5G technologies.</p>

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Effect of Zn incorporation on structure, microstructure and microwave dielectric properties of Mg2TiO4 ceramics

  • 期刊论文

  • 发表日期：

    2026年5月10日

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  • Soniya Boro,
  • R. K. Bhuyan,
  • P. K. Swain,
  • S. K. Parida

摘要

This study investigated the structural, microstructural and microwave dielectric properties of Zn-doped Mg2TiO4 ceramics synthesized by high-energy ball milling (HEBM) technique. The X-ray diffraction patterns (XRD), coupled with Rietveld refinement, confirm the formation of single-phase Mg2TiO4 ceramics, and the lattice parameters were measured. Microstructural characterization was carried out using a field emission scanning electron microscope (FE-SEM). The relative density, dielectric constant, and Q × fo values increase gradually with increasing Zn2+ content up to 0.05; beyond this concentration, all three parameters decrease, indicating an optimal Zn2+ concentration of x = 0.05 for enhanced properties. A dense microstructure with a maximum relative density of approximately 98.2% was attained for the (Mg0.95Zn0.05)2TiO4 ceramic, accompanied by a remarkable reduction in the sintering temperature from 1450 to 1300 °C. By increasing the concentration of Zn content, the maximum Q × fo value of the samples has exhibited a substantial enhancement from 125,000 (for x = 00) to 185,000 GHz (x = 0.05). A precise combination of microwave dielectric performance parameters, (εr ≈ 15.6, Q × fo = 185,000 GHz at 8.24 GHz) was procured for (Mg0.95Zn0.05)2TiO4 sample sintered at 1300 °C for 3 h. The observed improvement can be linked to lattice distortions, increased specimen density, and uniform microstructural grain growth. These results indicate that, owing to its properties, the (Mg0.95Zn0.05)2TiO4 ceramic is well-suited for use in low-loss, ultra-high-frequency applications, making it promising for 5G technologies.