Scholarlink

<p>Copper oxide (CuO) and samarium (Sm) doped CuO thin films have been deposited using the spray pyrolysis technique at normal atmosphere at a deposition temperature of 380&#xa0;°C. Several characterizations have been performed to reveal the microstructure, morphology, and optoelectronic properties of the deposited films. XRD analysis ensures that the deposited films are polycrystalline and they possess a monoclinic phase of cupric oxide that shows preferential growth along the (-111) and (111) planes. SEM images reveal that the deposited CuO films have spherical grains, and the size changes with Sm doping. EDX analysis confirms that the deposited films contain the desired copper (Cu), oxygen (O), and samarium (Sm) elements. The overall optical transmittance of CuO changes with Sm doping, and the lowest optical band gap energy (1.35&#xa0;eV) has been found for 3% Sm doped film. The electrical resistivity of the CuO thin film decreases with Sm doping up to 3% Sm and then increases. Moreover, the electrical resistivity of the films exhibits a decreasing trend with increasing temperature, forming a downward-sloping curve, which is characteristic of semiconducting behavior. This indicates that the resistivity diminishes as thermal energy promotes more charge carriers. Conversely, electrical conductivity improves with increasing Sm doping concentration. Among the samples, the CuO thin film doped with 3% Sm demonstrates the highest electrical conductivity, suggesting enhanced carrier mobility or concentration due to optimal doping</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effect of Sm doping on structural, optical and electrical properties of CuO thin films

  • 期刊论文

  • 发表日期：

    2026年5月8日

查看全文
  • Md. Maruf Hasan,
  • Meher Nigar,
  • M. Al-Amin,
  • Md. Saifur Rahman,
  • M. Humayan Kabir

摘要

Copper oxide (CuO) and samarium (Sm) doped CuO thin films have been deposited using the spray pyrolysis technique at normal atmosphere at a deposition temperature of 380 °C. Several characterizations have been performed to reveal the microstructure, morphology, and optoelectronic properties of the deposited films. XRD analysis ensures that the deposited films are polycrystalline and they possess a monoclinic phase of cupric oxide that shows preferential growth along the (-111) and (111) planes. SEM images reveal that the deposited CuO films have spherical grains, and the size changes with Sm doping. EDX analysis confirms that the deposited films contain the desired copper (Cu), oxygen (O), and samarium (Sm) elements. The overall optical transmittance of CuO changes with Sm doping, and the lowest optical band gap energy (1.35 eV) has been found for 3% Sm doped film. The electrical resistivity of the CuO thin film decreases with Sm doping up to 3% Sm and then increases. Moreover, the electrical resistivity of the films exhibits a decreasing trend with increasing temperature, forming a downward-sloping curve, which is characteristic of semiconducting behavior. This indicates that the resistivity diminishes as thermal energy promotes more charge carriers. Conversely, electrical conductivity improves with increasing Sm doping concentration. Among the samples, the CuO thin film doped with 3% Sm demonstrates the highest electrical conductivity, suggesting enhanced carrier mobility or concentration due to optimal doping