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<p>Samarium and chromium-doped bismuth ferrite (BSFCO) with composition Bi<sub>0.80</sub>Sm<sub>0.20</sub>Fe<sub>1−x</sub>Cr<sub>x</sub>O<sub>3</sub> (X= 0.06, 0.08, and 0.12) was synthesized via the solid-state reaction method. The materials exhibit a rhombohedral phase with an R3c space group. Higher chromium doping directly alters the crystallite size. Chromium addition enhances material densification. It increases the average particle size from 3.91 to 4.97&#xa0;μm. This particle growth aligns with a higher bulk density. It also corresponds to reduced porosity and lower dislocation density. Higher chromium levels strongly improve the ferroelectric properties. Specifically, increasing the Cr concentration from X= 0.06 to X = 0.12 enhances the saturation polarization (P<sub>s</sub>) from 1.00 to 4.47&#xa0;μC/cm<sup>2</sup> and the remnant polarization (P<sub>r</sub>) from 0.19 to 1.39&#xa0;μC/cm<sup>2</sup>. Modified Jiles-Atherton model fitting confirms this enhanced polarization. Chromium doping also reduces dielectric loss and improves bulk conductivity. This improvement is evidenced by a substantial drop in the bulk grain resistance (R1) from 1.81 × 10<sup>4</sup> Ω (for X= 0.06) down to 3.96 × 10<sup>2</sup> Ω (for <i>x</i> = 0.12), indicating minimized defect-induced losses. These improved ferroelectric and dielectric characteristics make the material suitable for multiferroic memory and capacitive energy storage devices.</p>

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Impact of site-specific Sm and Cr substitution on the ferroelectric and dielectric characteristics of bismuth ferrite ceramics

  • 期刊论文

  • 发表日期：

    2026年5月1日

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  • Renuka Pithiya,
  • P. V. Kanjariya

摘要

Samarium and chromium-doped bismuth ferrite (BSFCO) with composition Bi0.80Sm0.20Fe1−xCrxO3 (X= 0.06, 0.08, and 0.12) was synthesized via the solid-state reaction method. The materials exhibit a rhombohedral phase with an R3c space group. Higher chromium doping directly alters the crystallite size. Chromium addition enhances material densification. It increases the average particle size from 3.91 to 4.97 μm. This particle growth aligns with a higher bulk density. It also corresponds to reduced porosity and lower dislocation density. Higher chromium levels strongly improve the ferroelectric properties. Specifically, increasing the Cr concentration from X= 0.06 to X = 0.12 enhances the saturation polarization (Ps) from 1.00 to 4.47 μC/cm2 and the remnant polarization (Pr) from 0.19 to 1.39 μC/cm2. Modified Jiles-Atherton model fitting confirms this enhanced polarization. Chromium doping also reduces dielectric loss and improves bulk conductivity. This improvement is evidenced by a substantial drop in the bulk grain resistance (R1) from 1.81 × 104 Ω (for X= 0.06) down to 3.96 × 102 Ω (for x = 0.12), indicating minimized defect-induced losses. These improved ferroelectric and dielectric characteristics make the material suitable for multiferroic memory and capacitive energy storage devices.