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<p>The current work aims to produce a multifunctional polymeric nanocomposite of SiC-SWCNTs-PVP-PVA as a potential candidate for futuristic applications in optoelectronics and radiation shielding. SiC-SWCNTs-PVP-PVA polymeric nanocomposites (PNCs) were made using the solution-casting technique. Morphological and microstructural characterizations were performed using optical and scanning electron microscopy, energy dispersive X-ray spectroscopy, and Fourier-transform infrared spectroscopy. The UV–visible spectrophotometry technique was utilized to examine the optical features. The optical analysis reveals a vital enhancement in the optical properties of the SWCNTs-PVP-PVA medium due to SiC nanocrystals (NCs) loading. In particular, it exposes that SiC loading modifies the transmittance, optical bandgap, refractive index, dielectric constants, and optical conductivity of the SWCNTs-PVP-PVA medium. The transmittance of the SWCNTs-PVP-PVA medium declines from 80 to 18% through SiC NCs loading. The direct/indirect bandgap decreased to 4.35&#xa0;eV and 4.54&#xa0;eV (SiC PNCs) compared to 5.07&#xa0;eV and 4.92&#xa0;eV (pure medium), respectively. Nonlinear optical (NLO) constants, such as the first-order (χ<sup>(1)</sup>), third-order (χ<sup>(3)</sup>) susceptibility, and refractive index (n<sub>2</sub>) were obviously improved. The χ<sup>(3)</sup> value increases to 3.1 × 10<sup>−11</sup> esu compared to 2.67 × 10<sup>−11</sup> esu for pure medium. Phy-X/PSD software was applied to assess the photon radiation shielding performance for all PNCs. The linear and mass attenuation coefficients (LAC, MAC), half- and tenth-value layer (HVL, TVL), mean free path (MFP), and effective atomic number (Z<sub>eff.</sub>) of SWCNTs-PVP-PVA medium are also reinforced with SiC NCs loading. At 15&#xa0;keV photon energy, LAC of the SWCNTs-PVP-PVA medium increases to 2.52019&#xa0;cm<sup>−1</sup> (SiC PNCs) compared to 1.37951&#xa0;cm<sup>−1</sup> (pure). The MFP decreases to 0.3968&#xa0;cm (SiC PNCs) compared to 0.72489&#xa0;cm (pure). Overall, the SiC-SWCNTs-PVP-PVA PNCs are potential candidates for optoelectronic and radiation shielding developments.</p>

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Producing and tailoring the optical and radiation shielding features of SiC-SWCNTs-PVP-PVA polymeric nanocomposite for optoelectronic and radiation shielding applications

  • 期刊论文

  • 发表日期：

    2026年5月8日

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  • Sami S. Alharthi,
  • Ali Badawi

摘要

The current work aims to produce a multifunctional polymeric nanocomposite of SiC-SWCNTs-PVP-PVA as a potential candidate for futuristic applications in optoelectronics and radiation shielding. SiC-SWCNTs-PVP-PVA polymeric nanocomposites (PNCs) were made using the solution-casting technique. Morphological and microstructural characterizations were performed using optical and scanning electron microscopy, energy dispersive X-ray spectroscopy, and Fourier-transform infrared spectroscopy. The UV–visible spectrophotometry technique was utilized to examine the optical features. The optical analysis reveals a vital enhancement in the optical properties of the SWCNTs-PVP-PVA medium due to SiC nanocrystals (NCs) loading. In particular, it exposes that SiC loading modifies the transmittance, optical bandgap, refractive index, dielectric constants, and optical conductivity of the SWCNTs-PVP-PVA medium. The transmittance of the SWCNTs-PVP-PVA medium declines from 80 to 18% through SiC NCs loading. The direct/indirect bandgap decreased to 4.35 eV and 4.54 eV (SiC PNCs) compared to 5.07 eV and 4.92 eV (pure medium), respectively. Nonlinear optical (NLO) constants, such as the first-order (χ(1)), third-order (χ(3)) susceptibility, and refractive index (n2) were obviously improved. The χ(3) value increases to 3.1 × 10−11 esu compared to 2.67 × 10−11 esu for pure medium. Phy-X/PSD software was applied to assess the photon radiation shielding performance for all PNCs. The linear and mass attenuation coefficients (LAC, MAC), half- and tenth-value layer (HVL, TVL), mean free path (MFP), and effective atomic number (Zeff.) of SWCNTs-PVP-PVA medium are also reinforced with SiC NCs loading. At 15 keV photon energy, LAC of the SWCNTs-PVP-PVA medium increases to 2.52019 cm−1 (SiC PNCs) compared to 1.37951 cm−1 (pure). The MFP decreases to 0.3968 cm (SiC PNCs) compared to 0.72489 cm (pure). Overall, the SiC-SWCNTs-PVP-PVA PNCs are potential candidates for optoelectronic and radiation shielding developments.