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<p>This work reports the rapid synthesis and comprehensive physical characterization of single-crystalline double-mixed topological insulator BiSbTeSe<sub>2</sub> (BSTS). Single crystals were grown using a single step melt-growth method, enabling faster growth of the single crystals, with the growth direction along the c-axis as confirmed by single-crystal X-ray diffraction (XRD). Structural characterization via XRD and Raman spectroscopy revealed characteristic bonding and vibrational modes indicative of the mixed topological phase. The physical characterization of the grown crystals was performed using a physical property measurement system, where resistance measurements were performed down to 2&#xa0;K and under a transverse magnetic field. The resistance vs. temperature <i>R</i>(T) measurement down to 2&#xa0;K at 0 Tesla demonstrated a metallic to insulating transport characteristic with saturating plateaus below 10&#xa0;K. Under a transverse magnetic field the magnetoresistance (MR) shows drastic deviations from its parent mixed TI counterpart BiSbTe<sub>3</sub>. At low temperatures, the crystal exhibits negative MR that gradually diminishes as the temperature increases, which is interpreted in terms of defect-induced localized states and substitutional disorder at the Te/Se sites. These, along with the electron–electron interaction effects, likely contribute to weak anti-localization to weak localization crossovers.</p>

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Rapid crystal growth and physical property characterization of double-mixed topological insulator BiSbTeSe2

  • 期刊论文

  • 发表日期：

    2026年4月28日

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  • Dinesh Kumar,
  • Ganesh Gurjar,
  • N. K. Karn,
  • V. P. S. Awana,
  • Sudesh

摘要

This work reports the rapid synthesis and comprehensive physical characterization of single-crystalline double-mixed topological insulator BiSbTeSe2 (BSTS). Single crystals were grown using a single step melt-growth method, enabling faster growth of the single crystals, with the growth direction along the c-axis as confirmed by single-crystal X-ray diffraction (XRD). Structural characterization via XRD and Raman spectroscopy revealed characteristic bonding and vibrational modes indicative of the mixed topological phase. The physical characterization of the grown crystals was performed using a physical property measurement system, where resistance measurements were performed down to 2 K and under a transverse magnetic field. The resistance vs. temperature R(T) measurement down to 2 K at 0 Tesla demonstrated a metallic to insulating transport characteristic with saturating plateaus below 10 K. Under a transverse magnetic field the magnetoresistance (MR) shows drastic deviations from its parent mixed TI counterpart BiSbTe3. At low temperatures, the crystal exhibits negative MR that gradually diminishes as the temperature increases, which is interpreted in terms of defect-induced localized states and substitutional disorder at the Te/Se sites. These, along with the electron–electron interaction effects, likely contribute to weak anti-localization to weak localization crossovers.