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<p>Lead-free halide perovskites such as CsSnI<sub>3</sub> are promising alternatives to toxic lead-based absorbers due to their optimal bandgap and favorable optoelectronic properties; however, their practical deployment is hindered by the instability of Sn<sup>2+</sup>, which readily oxidizes to Sn<sup>4+</sup>, degrading device performance. In this work, CsSnI<sub>3</sub> thin films were fabricated via a drop-casting method inside a N<sub>2</sub>-filled glove box chamber. The photovoltaic-active black orthorhombic phase (B–<i>γ</i> phase) is stabilized and inhibited from transforming to the non-photoactive <i>δ</i> phase under ambient conditions. UV–Vis–NIR spectroscopy indicated a near-ideal direct bandgap of ~ 1.35&#xa0;eV, and X-ray photoelectron spectroscopy (XPS) verified reduced Sn<sup>4+</sup> formation. Complementary numerical simulations were carried out using SCAPS-1D for an optimized FTO/TiO<sub>2</sub>/CsSnI<sub>3</sub>/Cu<sub>2</sub>O/Au device architecture under AM 1.5G illumination. Systematic optimization of absorber thickness, bulk and interfacial defect densities, resistive losses, recombination parameters, and operating temperature (260–360&#xa0;K) yielded a maximum power conversion efficiency of 31.59% with <i>V</i><sub>oc</sub> ≈ 1.14&#xa0;V, <i>J</i><sub>sc</sub> ≈ 32.07&#xa0;mA&#xa0;cm<sup>−2</sup>, and FF ≈ 85.95% at a low temperature of 260&#xa0;K under AM 1.5G (1000 W m<sup>−2</sup>) illumination. Furthermore, device performance under AM 0 illumination (1360.40 W m<sup>−2</sup>) demonstrated an enhanced open-circuit voltage of 1.15&#xa0;V and a short-circuit current density of 38.89&#xa0;mA&#xa0;cm<sup>−2</sup>, with only a modest reduction in fill factor to 85.44%, resulting in a PCE of ~ 28.12% at 260&#xa0;K. These results demonstrate the suitability of the optimized device architecture for photovoltaic operation under non-terrestrial conditions.</p>

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Synthesis and characterization of CsSnI3 thin films and optimization of device suitability for photovoltaic applications in non-terrestrial conditions through SCAPS-1D simulations

  • 期刊论文

  • 发表日期：

    2026年5月12日

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  • Risita Sahu,
  • Kannan Ramaswamy,
  • V. Satya Narayana Murthy

摘要

Lead-free halide perovskites such as CsSnI3 are promising alternatives to toxic lead-based absorbers due to their optimal bandgap and favorable optoelectronic properties; however, their practical deployment is hindered by the instability of Sn2+, which readily oxidizes to Sn4+, degrading device performance. In this work, CsSnI3 thin films were fabricated via a drop-casting method inside a N2-filled glove box chamber. The photovoltaic-active black orthorhombic phase (B–γ phase) is stabilized and inhibited from transforming to the non-photoactive δ phase under ambient conditions. UV–Vis–NIR spectroscopy indicated a near-ideal direct bandgap of ~ 1.35 eV, and X-ray photoelectron spectroscopy (XPS) verified reduced Sn4+ formation. Complementary numerical simulations were carried out using SCAPS-1D for an optimized FTO/TiO2/CsSnI3/Cu2O/Au device architecture under AM 1.5G illumination. Systematic optimization of absorber thickness, bulk and interfacial defect densities, resistive losses, recombination parameters, and operating temperature (260–360 K) yielded a maximum power conversion efficiency of 31.59% with Voc ≈ 1.14 V, Jsc ≈ 32.07 mA cm−2, and FF ≈ 85.95% at a low temperature of 260 K under AM 1.5G (1000 W m−2) illumination. Furthermore, device performance under AM 0 illumination (1360.40 W m−2) demonstrated an enhanced open-circuit voltage of 1.15 V and a short-circuit current density of 38.89 mA cm−2, with only a modest reduction in fill factor to 85.44%, resulting in a PCE of ~ 28.12% at 260 K. These results demonstrate the suitability of the optimized device architecture for photovoltaic operation under non-terrestrial conditions.