Scholarlink

<p>Hybrid bonding is a key enabler for advanced 3D packaging, and die-to-wafer (D2W) integration is particularly attractive for heterogeneous systems due to the high flexibility. However, dielectric direct bonding for D2W commonly suffers from interfacial voids and limited bonding strength, especially the conventional homogeneous dielectric pairs. In this work, we innovatively propose heterogeneous dielectric SiO<sub>2</sub>–SiCN D2W bonding to enhance bonding strength and reduce interfacial defects compared with homogeneous SiO<sub>2</sub>–SiO<sub>2</sub> and SiCN–SiCN bonding, leveraging interfacial chemical asymmetry to drive interfacial reaction and byproduct consumption. Plasma activation can effectively improve the hydrophilicity of dielectric material surfaces with contact angles of approximately 5° and surface roughness below 0.3&#xa0;nm, thereby enabling D2W dielectric bonding with a low void ratio (&lt; 5%) and high bonding strength (&gt; 10&#xa0;MPa). The ESR spectra, XPS depth profi ling, and TEM-EDS analyses elucidate the underlying mechanism: plasmaactivation induces chemically asymmetric surface and subsurface states, characterized by oxygen-containing groupson the SiO₂ surface, and by oxygen-containing groups, Si-based species, and dangling bonds on the SiCN (sub)surface. The asymmetric chemical environment at the SiO<sub>2</sub>–SiCN interface is proposed to promote additional Si–O–Si bond formation and facilitate byproduct consumption, which is consistent with the improved bonding strength and reduced void. This study provides mechanistic insight into SiO<sub>2</sub>–SiCN D2W dielectric bonding and suggests that chemically asymmetric dielectric pairing can be beneficial for robust bonding under the process conditions investigated.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Heterogeneous SiO₂–SiCN die-to-wafer bonding: chemical asymmetry to drive interfacial reaction and byproduct consumption

  • 期刊论文

  • 发表日期：

    2026年4月17日

查看全文
  • Anqi Zhou,
  • Yu Zhang,
  • Fei Ding,
  • Ziqi Lian,
  • Xuze Li,
  • Renxi Jin,
  • Qiushi Kang,
  • Haibo Yang,
  • Liqiang Cao,
  • Qidong Wang

摘要

Hybrid bonding is a key enabler for advanced 3D packaging, and die-to-wafer (D2W) integration is particularly attractive for heterogeneous systems due to the high flexibility. However, dielectric direct bonding for D2W commonly suffers from interfacial voids and limited bonding strength, especially the conventional homogeneous dielectric pairs. In this work, we innovatively propose heterogeneous dielectric SiO2–SiCN D2W bonding to enhance bonding strength and reduce interfacial defects compared with homogeneous SiO2–SiO2 and SiCN–SiCN bonding, leveraging interfacial chemical asymmetry to drive interfacial reaction and byproduct consumption. Plasma activation can effectively improve the hydrophilicity of dielectric material surfaces with contact angles of approximately 5° and surface roughness below 0.3 nm, thereby enabling D2W dielectric bonding with a low void ratio (< 5%) and high bonding strength (> 10 MPa). The ESR spectra, XPS depth profi ling, and TEM-EDS analyses elucidate the underlying mechanism: plasmaactivation induces chemically asymmetric surface and subsurface states, characterized by oxygen-containing groupson the SiO₂ surface, and by oxygen-containing groups, Si-based species, and dangling bonds on the SiCN (sub)surface. The asymmetric chemical environment at the SiO2–SiCN interface is proposed to promote additional Si–O–Si bond formation and facilitate byproduct consumption, which is consistent with the improved bonding strength and reduced void. This study provides mechanistic insight into SiO2–SiCN D2W dielectric bonding and suggests that chemically asymmetric dielectric pairing can be beneficial for robust bonding under the process conditions investigated.