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<p>HfO<sub>x</sub>/Ni/HfO<sub>x</sub> samples with varying Ni thicknesses were fabricated to study resistive switching and magnetic properties. The influence of Ni intercalation on the resistive switching behavior and magnetic properties of the films was investigated through experiments and first-principles calculations. The results indicate the HfO<sub>x</sub>/Ni/HfO<sub>x</sub> samples exhibit smaller forming sltages compared to the HfO<sub>x</sub> sample. Moreover, the samples with a 2-nm Ni interlayer show enhanced homogeneity. Additionally, the saturation magnetization (<i>M</i><sub>s</sub>) of HfO<sub>x</sub>/Ni/HfO<sub>x</sub> samples increases with the increased thickness of the Ni layer which can be attributed to the strengthened exchange coupling between oxygen vacancy (<i>V</i><sub>O</sub>) defects and Ni ions. Owing to more <i>V</i><sub>O</sub> defects in the low-resistance state, the <i>M</i><sub>s</sub> value in this state is higher than that in the high-resistance state, leading to a magnetic variation as high as 41.26% for samples with a 2-nm Ni interlayer. Furthermore, first-principles results indicate Ni-doped HfO₂ with <i>V</i><sub>O</sub>s exhibits markedly higher magnetic moments than intrinsic HfO₂. Therefore, a filament model consisting of both <i>V</i><sub>O</sub>s and Ni ions is proposed, which originates from the confined interfacial reaction of the Ni interlayer. This model elucidates the concurrent switching and magnetoelectric coupling behavior. Results offer novel insights into the switching mechanism and forecast the potential applications of HfO<sub>x</sub>-based resistive random access memory in multifunctional electromagnetic memory.</p>

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Study of resistive switching and magnetism of HfOx film with Ni interlayer by experiments and first-principles calculations

  • 期刊论文

  • 发表日期：

    2026年4月30日

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  • Yan Zhang,
  • Hao Wei,
  • Yaqi Shi,
  • Li Duan,
  • Tingting Guo

摘要

HfOx/Ni/HfOx samples with varying Ni thicknesses were fabricated to study resistive switching and magnetic properties. The influence of Ni intercalation on the resistive switching behavior and magnetic properties of the films was investigated through experiments and first-principles calculations. The results indicate the HfOx/Ni/HfOx samples exhibit smaller forming sltages compared to the HfOx sample. Moreover, the samples with a 2-nm Ni interlayer show enhanced homogeneity. Additionally, the saturation magnetization (Ms) of HfOx/Ni/HfOx samples increases with the increased thickness of the Ni layer which can be attributed to the strengthened exchange coupling between oxygen vacancy (VO) defects and Ni ions. Owing to more VO defects in the low-resistance state, the Ms value in this state is higher than that in the high-resistance state, leading to a magnetic variation as high as 41.26% for samples with a 2-nm Ni interlayer. Furthermore, first-principles results indicate Ni-doped HfO₂ with VOs exhibits markedly higher magnetic moments than intrinsic HfO₂. Therefore, a filament model consisting of both VOs and Ni ions is proposed, which originates from the confined interfacial reaction of the Ni interlayer. This model elucidates the concurrent switching and magnetoelectric coupling behavior. Results offer novel insights into the switching mechanism and forecast the potential applications of HfOx-based resistive random access memory in multifunctional electromagnetic memory.