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<p>Recently, vanadium pentoxide (V<sub>2</sub>O<sub>5</sub>) thin films have garnered significant attention due to their exceptional properties, including good chemical and thermal stability, a wide optical band gap, and notable electrical and electrochromic characteristics. In this study, thin films of In-doped V₂O₅ were deposited&#xa0;by&#xa0;a simple low-cost spray pyrolysis method at 350&#xa0;°C.&#xa0;X-ray diffraction (XRD) analysis verified that the In-doped films crystallize in a polycrystalline orthorhombic structure. The incorporation of indium into the V<sub>2</sub>O<sub>5</sub> films enhances the lattice parameters and increases the unit cell volume. Moreover, evaluating the microstructural parameters reveals that the augmentation of indium content diminishes the crystallite size while concurrently enhancing the values of dislocation density and lattice strain. The optical characteristics of V<sub>2</sub>O<sub>5</sub> and In-doped V<sub>2</sub>O<sub>5</sub> films were analyzed, revealing that the refractive index values of the In-doped V<sub>2</sub>O<sub>5</sub> films improved with an elevated indium ratio. Furthermore, the study of the optical transition of the investigated films revealed a direct optical transition, and the optical energy gap values decreased from 2.43&#xa0;eV to 2.05&#xa0;eV as the indium concentration increased. Also, optoelectrical parameters have been thoroughly investigated, including plasma frequency, optical conductivity, relaxation time, optical mobility, and electrical conductivity. The results indicate that these films are wide-bandgap semiconductors, suggesting their suitability for various solar cell applications as a window layer. A novel Al/P-GaP/ n-In-doped V₂O₅/ Al heterojunction was successfully fabricated. Current–voltage analysis revealed that its electronic properties improved with higher indium content, as shown by enhancing the barrier height (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({\phi }_{b}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>ϕ</mi> <mi>b</mi> </msub> </math></EquationSource> </InlineEquation>) and reducing the ideality factor (<i>n</i>).</p>

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Effective role of Indium addition on electrical, structural, optical, and optoelectrical properties of sprayed deposited V2O5 thin films

  • 期刊论文

  • 发表日期：

    2026年4月11日

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  • H. Y. S. Al-Zahrani,
  • I. M. El Radaf

摘要

Recently, vanadium pentoxide (V2O5) thin films have garnered significant attention due to their exceptional properties, including good chemical and thermal stability, a wide optical band gap, and notable electrical and electrochromic characteristics. In this study, thin films of In-doped V₂O₅ were deposited by a simple low-cost spray pyrolysis method at 350 °C. X-ray diffraction (XRD) analysis verified that the In-doped films crystallize in a polycrystalline orthorhombic structure. The incorporation of indium into the V2O5 films enhances the lattice parameters and increases the unit cell volume. Moreover, evaluating the microstructural parameters reveals that the augmentation of indium content diminishes the crystallite size while concurrently enhancing the values of dislocation density and lattice strain. The optical characteristics of V2O5 and In-doped V2O5 films were analyzed, revealing that the refractive index values of the In-doped V2O5 films improved with an elevated indium ratio. Furthermore, the study of the optical transition of the investigated films revealed a direct optical transition, and the optical energy gap values decreased from 2.43 eV to 2.05 eV as the indium concentration increased. Also, optoelectrical parameters have been thoroughly investigated, including plasma frequency, optical conductivity, relaxation time, optical mobility, and electrical conductivity. The results indicate that these films are wide-bandgap semiconductors, suggesting their suitability for various solar cell applications as a window layer. A novel Al/P-GaP/ n-In-doped V₂O₅/ Al heterojunction was successfully fabricated. Current–voltage analysis revealed that its electronic properties improved with higher indium content, as shown by enhancing the barrier height ( \({\phi }_{b}\) ϕ b ) and reducing the ideality factor (n).