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<p>This study presents a detailed investigation of Ni/Cu/Fe<sub>2</sub>O<sub>3</sub>:Bi<sub>2</sub>O<sub>3</sub>/n-GaN metal–oxide–semiconductor (MOS) heterojunctions, focusing on their structural, chemical, and electrical properties. Fe<sub>2</sub>O<sub>3</sub>:Bi<sub>2</sub>O<sub>3</sub> composite films were successfully deposited on n-GaN substrates, as confirmed by glancing-angle X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), which verified the film’s crystallinity, composition, and the formation of a uniform insulating layer. XPS further confirmed the presence of key elements and proper interface formation between the metal electrodes and the semiconductor. Electrical measurements revealed that the MOS exhibited clear rectifying behavior with reduced leakage current compared to the conventional Schottky junction (SJ). Analysis of key parameters including Schottky barrier height (<i>Φ</i><sub>b</sub>), ideality factor (<i>n</i>), and series resistance (<i>R</i>ₛ) was conducted using multiple extraction methods (Cheung’s, F(<i>V</i>)–<i>V</i>, and <i>Ψ</i><sub>S</sub>–<i>V</i>), all showing good agreement. The forward <i>I</i>–<i>V</i> characteristics of both SJ and MOS HJs demonstrated ohmic behavior at lower voltage regions, transitioning to space-charge-limited conduction (SCLC) at higher voltages. This transition confirms the influence of interface states and trap-assisted conduction in determining the electrical transport mechanism. These results demonstrate the effectiveness of Fe<sub>2</sub>O<sub>3</sub>:Bi<sub>2</sub>O<sub>3</sub> nanocomposites as insulating layers in GaN-based MOS devices and underscore their potential for future optoelectronic applications.</p>

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Enhanced Ni/Cu/n-GaN Schottky junctions via Fe2O3:Bi2O3 nanocomposite interfacial engineering

  • 期刊论文

  • 发表日期：

    2026年4月30日

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  • Karri Aswini,
  • Chander Amgoth Pawar,
  • Narbayev Azamat Baxramovich,
  • V. Madhu Mohan,
  • K. Munirathnam,
  • V. Manjunath,
  • G. V. Ashok Reddy,
  • Venkata Krishna Reddy Bommireddy,
  • Koppala Siva Kumar,
  • Vasudeva Reddy Minnam Reddy,
  • Jagadeesh Kumar Alagarasan

摘要

This study presents a detailed investigation of Ni/Cu/Fe2O3:Bi2O3/n-GaN metal–oxide–semiconductor (MOS) heterojunctions, focusing on their structural, chemical, and electrical properties. Fe2O3:Bi2O3 composite films were successfully deposited on n-GaN substrates, as confirmed by glancing-angle X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), which verified the film’s crystallinity, composition, and the formation of a uniform insulating layer. XPS further confirmed the presence of key elements and proper interface formation between the metal electrodes and the semiconductor. Electrical measurements revealed that the MOS exhibited clear rectifying behavior with reduced leakage current compared to the conventional Schottky junction (SJ). Analysis of key parameters including Schottky barrier height (Φb), ideality factor (n), and series resistance (Rₛ) was conducted using multiple extraction methods (Cheung’s, F(V)–V, and ΨS–V), all showing good agreement. The forward I–V characteristics of both SJ and MOS HJs demonstrated ohmic behavior at lower voltage regions, transitioning to space-charge-limited conduction (SCLC) at higher voltages. This transition confirms the influence of interface states and trap-assisted conduction in determining the electrical transport mechanism. These results demonstrate the effectiveness of Fe2O3:Bi2O3 nanocomposites as insulating layers in GaN-based MOS devices and underscore their potential for future optoelectronic applications.