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<p>This study explores the impact of sulfur passivation on the electrical characteristics of Al/Si<sub>3</sub>N<sub>4</sub>/n-GaAs metal–insulator-semiconductor (MIS) devices. Sulfur passivation, performed using an ammonium sulfide solution before low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD) of silicon nitride, modifies interface properties by reducing interface defects and native oxide formation on GaAs surfaces. Comparative analyses reveal&#xa0;that sulfur-passivated samples exhibit reduced series resistance and more stable donor concentration across frequencies (10&#xa0;kHz–1&#xa0;MHz). These results demonstrate the effectiveness of sulfur passivation in modifying interface states. The combined use of sulfur treatment and LF-PECVD Si<sub>3</sub>N<sub>4</sub> deposition provides a robust approach for optimizing semiconductor device fabrication with improved interface quality.</p>

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Analysis of the effects of sulfur passivation on Al/Si3N4/n-GaAs MIS: an approach by the calculating of series resistance

  • 期刊论文

  • 发表日期：

    2026年4月10日

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  • Hamza Jaoudari,
  • Wafaa Zibar,
  • Dounia Fatihi,
  • Bouchra Ifegous,
  • Kamal Abderrafi,
  • R’hma Adhiri

摘要

This study explores the impact of sulfur passivation on the electrical characteristics of Al/Si3N4/n-GaAs metal–insulator-semiconductor (MIS) devices. Sulfur passivation, performed using an ammonium sulfide solution before low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD) of silicon nitride, modifies interface properties by reducing interface defects and native oxide formation on GaAs surfaces. Comparative analyses reveal that sulfur-passivated samples exhibit reduced series resistance and more stable donor concentration across frequencies (10 kHz–1 MHz). These results demonstrate the effectiveness of sulfur passivation in modifying interface states. The combined use of sulfur treatment and LF-PECVD Si3N4 deposition provides a robust approach for optimizing semiconductor device fabrication with improved interface quality.