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<p>Polytetrafluoroethylene (PTFE) has become an indispensable substrate for printed circuit board sheets in high-frequency microwave applications due to its low dielectric constant, dielectric loss and excellent chemical stability. To better leverage the advantages of PTFE composite materials, it is crucial to address the issues of high thermal expansion coefficient (CTE) and poor interfacial bonding performance. In this work, the hot-pressed sintering method was used to prepare the PTFE/SiO<sub>2</sub> composites to enhance the interfacial structure and improve the properties, especially CTE and mechanical properties. Results showed the PTFE/SiO<sub>2</sub> composites formed a mechanical interlock and anchor structure on the interface at suitable hot-pressed conditions. At 380&#xa0;°C and 10&#xa0;MPa, SEM and 3D images confirmed a dense epidermal layer, significantly reducing micro-cracks. The surface roughness and wettability tests showed the appearance quality of the composites was improved. Density reached its maximum and moisture resistance performance was best. The CTE of the PTFE/SiO<sub>2</sub> composites was as low as 38.65&#xa0;ppm/K. Simultaneously, compared with other PTFE/SiO<sub>2</sub> composites prepared under different hot-pressed sintering conditions, the composites prepared at 380&#xa0;°C and 10&#xa0;MPa had better dielectric properties (10&#xa0;GHz, D<sub>k</sub> 2.66, D<sub>f</sub> 5.1E<sup>−4</sup>), tensile strength (18.78&#xa0;MPa) and elongation at break (286.24%).</p>

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Interfacial structure and properties of PTFE/SiO2 composites prepared by hot-pressed sintering

  • 期刊论文

  • 发表日期：

    2026年4月13日

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  • Wenyu Xu,
  • Shuxun Ding,
  • Qiuying Li,
  • Yanchao Che,
  • Yi Jin

摘要

Polytetrafluoroethylene (PTFE) has become an indispensable substrate for printed circuit board sheets in high-frequency microwave applications due to its low dielectric constant, dielectric loss and excellent chemical stability. To better leverage the advantages of PTFE composite materials, it is crucial to address the issues of high thermal expansion coefficient (CTE) and poor interfacial bonding performance. In this work, the hot-pressed sintering method was used to prepare the PTFE/SiO2 composites to enhance the interfacial structure and improve the properties, especially CTE and mechanical properties. Results showed the PTFE/SiO2 composites formed a mechanical interlock and anchor structure on the interface at suitable hot-pressed conditions. At 380 °C and 10 MPa, SEM and 3D images confirmed a dense epidermal layer, significantly reducing micro-cracks. The surface roughness and wettability tests showed the appearance quality of the composites was improved. Density reached its maximum and moisture resistance performance was best. The CTE of the PTFE/SiO2 composites was as low as 38.65 ppm/K. Simultaneously, compared with other PTFE/SiO2 composites prepared under different hot-pressed sintering conditions, the composites prepared at 380 °C and 10 MPa had better dielectric properties (10 GHz, Dk 2.66, Df 5.1E−4), tensile strength (18.78 MPa) and elongation at break (286.24%).