<p>High-permittivity dielectric materials are essential for advancing the miniaturization of electronic components and developing high-capacity systems. However, it is often difficult to achieve both a high dielectric constant and low dielectric loss, which hinders their practical application. In this study, a novel (La + Nb) co-doped TiO₂ (LNTO) ceramic shows a colossal dielectric constant exceeding 10<sup>4</sup> and a reasonably low dielectric loss (&lt; 0.06) at 1kHz. Excellent stability is maintained across a broad temperature (30–200&#xa0;°C) and frequency (10<sup>2</sup>–10<sup>6</sup>&#xa0;Hz) range for the x = 0.04 ceramic. Impedance spectroscopy and I-V results revealed that the colossal dielectric characteristics of LNTO were primarily driven by the internal barrier layer capacitance model. Contributions from electrode effects are confined to the low-frequency region and become significant only at elevated temperatures.</p>

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Preparation, characterization and colossal permittivity of (La + Nb) co-doped TiO2 ceramics

  • Jie Bao,
  • Mingwu Li,
  • Limei Zhou,
  • Gang Li,
  • Jie Xu

摘要

High-permittivity dielectric materials are essential for advancing the miniaturization of electronic components and developing high-capacity systems. However, it is often difficult to achieve both a high dielectric constant and low dielectric loss, which hinders their practical application. In this study, a novel (La + Nb) co-doped TiO₂ (LNTO) ceramic shows a colossal dielectric constant exceeding 104 and a reasonably low dielectric loss (< 0.06) at 1kHz. Excellent stability is maintained across a broad temperature (30–200 °C) and frequency (102–106 Hz) range for the x = 0.04 ceramic. Impedance spectroscopy and I-V results revealed that the colossal dielectric characteristics of LNTO were primarily driven by the internal barrier layer capacitance model. Contributions from electrode effects are confined to the low-frequency region and become significant only at elevated temperatures.