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<p>In this work, Ge was systematically introduced into an optimized n-type PbTe<sub>0.99</sub>I<sub>0.01</sub> − 0.5%Bi<sub>2</sub>Te<sub>3</sub> matrix to further enhance its thermoelectric properties. Ge atoms were successfully incorporated into the PbTe lattice without forming secondary phases, resulting in pronounced lattice distortions and grain refinement. Moderate Ge doping (<i>x</i> = 0.01) optimally balances electrical conductivity and the Seebeck coefficient, leading to a high power factor of 16.5&#xa0;μW&#xa0;cm<sup>−1</sup>&#xa0;K⁻<sup>2</sup> at 823&#xa0;K. Simultaneously, Ge doping significantly suppresses the lattice thermal conductivity to below 0.5 W m<sup>−1</sup>&#xa0;K<sup>−1</sup> at 823&#xa0;K, primarily due to enhanced phonon scattering from point defects, off-center lattice distortions, and increased grain boundary density. As a result, the <i>x</i> = 0.01 sample achieves a peak ZT value of ~ 1.2, demonstrating that controlled Ge doping provides a simple and effective strategy to further enhance the thermoelectric performance of n-type PbTe.</p>

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Enhanced thermoelectric performance of Ge-doped n-type PbTe–0.5%Bi2Te3 alloys with optimized iodine doping

  • 期刊论文

  • 发表日期：

    2026年4月8日

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  • Yin Zhou,
  • Xiangzhao Zhang,
  • Sixuan Wang,
  • Jing Wang,
  • Xiukuang Zhang,
  • Jian Yang

摘要

In this work, Ge was systematically introduced into an optimized n-type PbTe0.99I0.01 − 0.5%Bi2Te3 matrix to further enhance its thermoelectric properties. Ge atoms were successfully incorporated into the PbTe lattice without forming secondary phases, resulting in pronounced lattice distortions and grain refinement. Moderate Ge doping (x = 0.01) optimally balances electrical conductivity and the Seebeck coefficient, leading to a high power factor of 16.5 μW cm−1 K⁻2 at 823 K. Simultaneously, Ge doping significantly suppresses the lattice thermal conductivity to below 0.5 W m−1 K−1 at 823 K, primarily due to enhanced phonon scattering from point defects, off-center lattice distortions, and increased grain boundary density. As a result, the x = 0.01 sample achieves a peak ZT value of ~ 1.2, demonstrating that controlled Ge doping provides a simple and effective strategy to further enhance the thermoelectric performance of n-type PbTe.