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<p>Zinc sulfide (ZnS) stands out as a buffer layer of choice in solar cell devices, owing to its unmatched stability combined with excellent physical and chemical characteristics. This study examined the structural, optical, and electrical performance of ZnS and doped ZnS thin films prepared on glass substrates by the chemical bath deposition (CBD) method with different growth profiles. X-ray diffraction (XRD) shows a wurtzite structure for ZnS and an amorphous structure for doped ZnS thin film samples. Scanning electron microscopy (SEM) reveals that doped ZnS samples have clusters of nanoparticles and rod-like structures compared to ZnS thin films. Furthermore, the energy-dispersive X-ray spectroscopy (EDX) spectrum confirms the presence of Cu and Fe in doped ZnS thin films. Optical measurements reveal that doped ZnS thin film samples have a maximum transmission of 70% within the visible spectrum of 350–800&#xa0;nm compared to ZnS thin films.&#xa0;The optical bandgap of the ZnS and doped ZnS thin films lies in the range of 3.6–3.9&#xa0;eV across all samples. Undoped ZnS thin films showed very high resistivity, while doping reduced resistivity and improved conductivity. This tunability highlights the potential of doped ZnS thin films as a buffer layer material for solar cell applications.</p>

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Tailoring the structural, optical, and electrical properties of ZnS and doped ZnS thin films synthesized by the CBD method for solar cell applications

  • 期刊论文

  • 发表日期：

    2026年4月6日

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  • Saima Perveen,
  • Shaista Shazada

摘要

Zinc sulfide (ZnS) stands out as a buffer layer of choice in solar cell devices, owing to its unmatched stability combined with excellent physical and chemical characteristics. This study examined the structural, optical, and electrical performance of ZnS and doped ZnS thin films prepared on glass substrates by the chemical bath deposition (CBD) method with different growth profiles. X-ray diffraction (XRD) shows a wurtzite structure for ZnS and an amorphous structure for doped ZnS thin film samples. Scanning electron microscopy (SEM) reveals that doped ZnS samples have clusters of nanoparticles and rod-like structures compared to ZnS thin films. Furthermore, the energy-dispersive X-ray spectroscopy (EDX) spectrum confirms the presence of Cu and Fe in doped ZnS thin films. Optical measurements reveal that doped ZnS thin film samples have a maximum transmission of 70% within the visible spectrum of 350–800 nm compared to ZnS thin films. The optical bandgap of the ZnS and doped ZnS thin films lies in the range of 3.6–3.9 eV across all samples. Undoped ZnS thin films showed very high resistivity, while doping reduced resistivity and improved conductivity. This tunability highlights the potential of doped ZnS thin films as a buffer layer material for solar cell applications.