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<p>This work presents the numerical analysis of a self-powered photodetector based on an optimized FTO/ZnO/RbCaCl<sub>3</sub>/PTAA configuration under standard AM 1.5G solar illumination. In the proposed device, FTO acts as a transparent conducting electrode, while wide bandgap ZnO (3.3&#xa0;eV) serves as the electron transport layer. The photoactive region comprises the narrow-bandgap absorber material RbCaCl<sub>3</sub> (1.386&#xa0;eV), which can effectively absorb most of the incident light and PTAA (2.96&#xa0;eV) is used as the hole transport layer to support efficient hole extraction. The performances of the optimized photodetector are excellent, where a high photocurrent density of 32.08&#xa0;mA/cm<sup>2</sup> with an external quantum efficiency exceeding 100% ensures highly efficient photon-to-carrier conversion. Moreover, the maximum responsivity is calculated to be 0.629 A/W, which reflects a strong and reliable photoresponse upon illumination. A very high specific detectivity of 4.15 × 10<sup>15</sup> Jones is also achieved, demonstrating that the device is capable of detecting extremely weak optical signals with a superior signal-to-noise ratio. Numerical results clearly establish that the proposed photodetector presents an inexpensive and high-performance pathway toward future optoelectronic systems for applications in effective photodetection and solar energy-driven devices.</p>

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Enhanced optoelectronic performance of a RbCaCl3-based perovskite photodetector integrated with ZnO and PTAA as transport layer

  • 期刊论文

  • 发表日期：

    2026年3月31日

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  • Vikash Mourya,
  • D. K. Dwivedi

摘要

This work presents the numerical analysis of a self-powered photodetector based on an optimized FTO/ZnO/RbCaCl3/PTAA configuration under standard AM 1.5G solar illumination. In the proposed device, FTO acts as a transparent conducting electrode, while wide bandgap ZnO (3.3 eV) serves as the electron transport layer. The photoactive region comprises the narrow-bandgap absorber material RbCaCl3 (1.386 eV), which can effectively absorb most of the incident light and PTAA (2.96 eV) is used as the hole transport layer to support efficient hole extraction. The performances of the optimized photodetector are excellent, where a high photocurrent density of 32.08 mA/cm2 with an external quantum efficiency exceeding 100% ensures highly efficient photon-to-carrier conversion. Moreover, the maximum responsivity is calculated to be 0.629 A/W, which reflects a strong and reliable photoresponse upon illumination. A very high specific detectivity of 4.15 × 1015 Jones is also achieved, demonstrating that the device is capable of detecting extremely weak optical signals with a superior signal-to-noise ratio. Numerical results clearly establish that the proposed photodetector presents an inexpensive and high-performance pathway toward future optoelectronic systems for applications in effective photodetection and solar energy-driven devices.