<p>Antimony selenide (Sb₂Se₃) has been extensively studied as a high-potential absorber semiconductor material for solar energy conversion because of its exceptional optoelectronic characteristics, earth-based constituents, and non-toxic nature. Despite its potential, the energy conversion of Sb₂Se₃-based thin-film photovoltaics remains limited, necessitating further optimization of the absorber layer through strategic doping. In this study, silver (Ag)-doped Sb₂Se₃ thin films were successfully synthesized via a sequential process involving magnetron sputtering of Sb₂Se₃, thermal evaporation of a thin Ag layer, and subsequent post-annealing for varying durations. The structural, morphological, and optical impacts of Ag incorporation were systematically investigated. X-Ray Diffraction (XRD) analysis confirmed that Ag was successfully integrated into the Sb₂Se₃ lattice by substituting antimony (Sb) sites without the formation of any secondary metallic or impurity phases. Optical characterization demonstrated a notable reduction in the bandgap from 1.33&#xa0;eV to 1.19&#xa0;eV upon silver incorporation, effectively extending the visible light absorption range. The elemental composition of the sample was first validated using Energy Dispersive Spectroscopy. Subsequently, X-Ray Photoelectron Spectroscopy was employed to confirm that Ag atoms migrate from the surface into the bulk lattice during extended annealing. These findings highlight that Ag-doped Sb₂Se₃ films prepared via sequential deposition offer a viable and effective route for enhancing the performance of next-generation sustainable photovoltaic devices.</p>