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<p>Chalcogenides have emerged as promising candidates for next-generation photovoltaics and photodetection, primarily benefiting from their cost-effective processability and excellent tunable optoelectronic properties. However, balancing the low dark current and broad light absorption range of chalcogenide-based photodetectors remains a significant challenge. Herein, we developed a selenization treatment for antimony bismuth sulfide thin films to broaden their absorption range. It was found that the selenization temperature can modulate the surface morphology, crystallinity, and optical properties of the thin films. Furthermore, we also fully characterized the charge carrier dynamics of the thin films before and after selenization via transient absorption and time-resolved microwave conductivity. Corresponding photodiodes were fabricated based on a conventional photodiode structure. The optimized photodiodes achieved low noise, broad spectral response and outstanding stability. Moreover, the Se-treated antimony bismuth sulfide photodetectors exhibit great potential for near-infrared photon-counting applications.</p>

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Selenized antimony bismuth sulfide thin films for low-noise, highly stable near-infrared photodetection

  • 期刊论文

  • 发表日期：

    2026年4月6日

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  • Xiaohuang Tan,
  • Yujie Yang,
  • Qianqian Lin

摘要

Chalcogenides have emerged as promising candidates for next-generation photovoltaics and photodetection, primarily benefiting from their cost-effective processability and excellent tunable optoelectronic properties. However, balancing the low dark current and broad light absorption range of chalcogenide-based photodetectors remains a significant challenge. Herein, we developed a selenization treatment for antimony bismuth sulfide thin films to broaden their absorption range. It was found that the selenization temperature can modulate the surface morphology, crystallinity, and optical properties of the thin films. Furthermore, we also fully characterized the charge carrier dynamics of the thin films before and after selenization via transient absorption and time-resolved microwave conductivity. Corresponding photodiodes were fabricated based on a conventional photodiode structure. The optimized photodiodes achieved low noise, broad spectral response and outstanding stability. Moreover, the Se-treated antimony bismuth sulfide photodetectors exhibit great potential for near-infrared photon-counting applications.