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<p>Pure and Mg-doped ZnO nanostructures were synthesized and deposited onto silicon (Si) substrates using a spin-coating technique. The influence of Mg incorporation on the nanostructure and optoelectronic properties of the resulting Mg:ZnO films was systematically investigated. XRD and AFM analyses revealed the evolution of crystallinity, nanoparticle size, and surface roughness with increasing Mg content. The passivation behavior of the coated Si surface was examined through FTIR and photoconductance measurements, enabling a detailed assessment of the changes in interfacial chemical bonding and recombination mechanisms. FTIR spectra showed a pronounced reduction of unstable Si–H vibrations accompanied by the emergence of stronger Zn–O–Mg bonding networks, confirming improved chemical stabilization of the Si surface. Consistently, minority-carrier lifetime values increased markedly—from 2&#xa0;μs for bare Si to 112&#xa0;μs after Mg:ZnO deposition demonstrating efficient surface passivation. In addition, UV–Vis reflectivity measurements showed a significant decrease in surface reflectance, from 35% for uncoated Si to values as low as 5% depending on Mg concentration.</p>

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Correlation between structural modification and passivation quality in Mg-doped ZnO/silicon nanostructures

  • 期刊论文

  • 发表日期：

    2026年3月26日

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  • Moez Salem,
  • Ahlem Boussaid,
  • Noura Khemiri,
  • Melek Kassmi,
  • Amel Haouas,
  • Abdullah Almohammedi

摘要

Pure and Mg-doped ZnO nanostructures were synthesized and deposited onto silicon (Si) substrates using a spin-coating technique. The influence of Mg incorporation on the nanostructure and optoelectronic properties of the resulting Mg:ZnO films was systematically investigated. XRD and AFM analyses revealed the evolution of crystallinity, nanoparticle size, and surface roughness with increasing Mg content. The passivation behavior of the coated Si surface was examined through FTIR and photoconductance measurements, enabling a detailed assessment of the changes in interfacial chemical bonding and recombination mechanisms. FTIR spectra showed a pronounced reduction of unstable Si–H vibrations accompanied by the emergence of stronger Zn–O–Mg bonding networks, confirming improved chemical stabilization of the Si surface. Consistently, minority-carrier lifetime values increased markedly—from 2 μs for bare Si to 112 μs after Mg:ZnO deposition demonstrating efficient surface passivation. In addition, UV–Vis reflectivity measurements showed a significant decrease in surface reflectance, from 35% for uncoated Si to values as low as 5% depending on Mg concentration.