<p>In regards to the advances in InGaZnO for flexible transistors applications, herein for the first time we measure the broadband radio-frequency range (10 Hz to 1 MHz) dielectric permittivity ε′ and electrical conductivity σ of InGaZnO₄ nanoparticle layers at different temperatures ranging from 10 to 300 K. The InGaZnO₄ nanoparticles prepared by metal–nitrate–glycol gel decomposition method exhibited a highly porous amorphous structure after sintering at 500&#xa0;°C, while the crystallinity and particle size increased with increasing sintering temperature. Radio-frequency (RF) measurements were performed in two states: hydrated (stored under atmospheric conditions for several days) and dehydrated (dried under 10^–5 mbar vacuum for two days). All the samples exhibited a characteristic decrease in permittivity with increasing frequency, however the frequency-dependence of permittivity decreased with decrease in temperature and reached to a dispersionless state at low temperatures (around 11 K) with <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\varepsilon^{\prime}\)</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mi>ε</mi> <mo>′</mo> </msup> </math></EquationSource> </InlineEquation> values stabilizing around 4–5 for all hydrated and dehydrated samples. The RF electrical conductivity of InGaZnO₄ was found to increase with the increase of frequency at low temperatures, however, it remains almost frequency-independent at near ambient temperatures with values between 9.4 × 10⁻⁷ and 1.9 × 10⁻⁵ S/cm depending on the grain size and hydration status.</p>