<p>The present study systematically investigates the effect of lithium (Li) doping concentration (1–5 at%) on the structural, morphological, optical, and electrical characteristics of CdO thin films via spray pyrolysis technique, with an emphasis on identifying the optimal doping level for enhanced opto-electronic performance. X-ray diffraction analysis confirms that all Li-doped CdO (Li:CdO) films retain a polycrystalline, face-centered cubic structure with dominant (111) and (200) orientations. Notably, FE-SEM micrographs reveal a distinct morphology transition from rough, irregular surfaces to smoother, uniformly distributed spherical and chain-like clusters as Li doping increases, indicating improved film compactness and homogeneity. Optical studies show a significant enhancement in transmittance of 64% for 1 at% Li:CdO to 76% for 4 at% doping levels at 555&#xa0;nm, followed by a slight decline to 74% for 5 at% Li:CdO thin films. Correspondingly, the direct band gap widens from 2.44 to 2.51&#xa0;eV with increasing Li content from 1 to 4 at% in CdO thin films, attributed to the Burstein–Moss effect, and decreases to 2.42&#xa0;eV at higher doping of 5 at%. Electrical measurements reveal resistivity, carrier concentration, and mobility values in the ranges of 2.09 to 2.73 × 10<sup>−4</sup> Ω·cm, 1.10 to 3.61 × 10<sup>20</sup> cm<sup>−3</sup>, and 19.37 to 42.78 cm<sup>2</sup>/V·s, respectively. Importantly, the 4 at% Li:CdO film exhibits a markedly superior figure of merit of 32.63 × 10<sup>-3</sup> (Ω/cm<sup>2</sup>)<sup>-1</sup>, demonstrating its potential as an optimized transparent conducting oxide. The novelty of this work lies in establishing 4 at% Li as the critical doping threshold that simultaneously maximizes structural quality, optical transparency, and electrical conductivity, offering valuable insights for designing high-performance Li:CdO-based optoelectronic devices.</p>

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Influence of lithium incorporation on the crystallinity, morphology and optoelectronic performance of CdO thin films deposited via spray pyrolysis

  • S. P. Desai,
  • A. A. Mane,
  • A. B. Farakte,
  • S. A. Nikam,
  • A. V. Moholkar

摘要

The present study systematically investigates the effect of lithium (Li) doping concentration (1–5 at%) on the structural, morphological, optical, and electrical characteristics of CdO thin films via spray pyrolysis technique, with an emphasis on identifying the optimal doping level for enhanced opto-electronic performance. X-ray diffraction analysis confirms that all Li-doped CdO (Li:CdO) films retain a polycrystalline, face-centered cubic structure with dominant (111) and (200) orientations. Notably, FE-SEM micrographs reveal a distinct morphology transition from rough, irregular surfaces to smoother, uniformly distributed spherical and chain-like clusters as Li doping increases, indicating improved film compactness and homogeneity. Optical studies show a significant enhancement in transmittance of 64% for 1 at% Li:CdO to 76% for 4 at% doping levels at 555 nm, followed by a slight decline to 74% for 5 at% Li:CdO thin films. Correspondingly, the direct band gap widens from 2.44 to 2.51 eV with increasing Li content from 1 to 4 at% in CdO thin films, attributed to the Burstein–Moss effect, and decreases to 2.42 eV at higher doping of 5 at%. Electrical measurements reveal resistivity, carrier concentration, and mobility values in the ranges of 2.09 to 2.73 × 10−4 Ω·cm, 1.10 to 3.61 × 1020 cm−3, and 19.37 to 42.78 cm2/V·s, respectively. Importantly, the 4 at% Li:CdO film exhibits a markedly superior figure of merit of 32.63 × 10-3 (Ω/cm2)-1, demonstrating its potential as an optimized transparent conducting oxide. The novelty of this work lies in establishing 4 at% Li as the critical doping threshold that simultaneously maximizes structural quality, optical transparency, and electrical conductivity, offering valuable insights for designing high-performance Li:CdO-based optoelectronic devices.