<p>Glycine-doped L-tartaric acid (GLTA) single crystals were grown by slow evaporation technique to improve the optical damage resistance and nonlinear optical performance of L-tartaric acid. Single crystal XRD confirmed monoclinic structure with preservation of lattice symmetry after doping. FTIR and CHN analyses verified the incorporation of glycine molecules into the hydrogen-bonded network. The crystal exhibits a laser damage threshold of 0.736 GW cm⁻<sup>2</sup>, which is 37.5% higher than pure LTA. The second harmonic generation efficiency is 1.12 times that of KDP reference crystal. Z-scan measurements revealed negative nonlinear refractive index and third-order susceptibility of 8.660 × 10⁻⁶ esu. Improved hardness and enhanced optical stability indicate that glycine doping strengthens intermolecular interactions and power-handling capability. These results demonstrate that GLTA is a promising candidate for high-power photonic and optoelectronic applications.</p>

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Investigation of various characteristics of glycine-doped L-tartaric acid crystals for photonics and optoelectronics applications

  • K. Jeyapappa,
  • P. Selvarajan

摘要

Glycine-doped L-tartaric acid (GLTA) single crystals were grown by slow evaporation technique to improve the optical damage resistance and nonlinear optical performance of L-tartaric acid. Single crystal XRD confirmed monoclinic structure with preservation of lattice symmetry after doping. FTIR and CHN analyses verified the incorporation of glycine molecules into the hydrogen-bonded network. The crystal exhibits a laser damage threshold of 0.736 GW cm⁻2, which is 37.5% higher than pure LTA. The second harmonic generation efficiency is 1.12 times that of KDP reference crystal. Z-scan measurements revealed negative nonlinear refractive index and third-order susceptibility of 8.660 × 10⁻⁶ esu. Improved hardness and enhanced optical stability indicate that glycine doping strengthens intermolecular interactions and power-handling capability. These results demonstrate that GLTA is a promising candidate for high-power photonic and optoelectronic applications.