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<p>Manganese-doped sodium potassium sulfate (Mn: NaKSO<sub>4</sub>) single crystals were successfully grown by the slow evaporation solution growth technique at room temperature, targeting sustainable material for high-performance nonlinear optical (NLO) and photonic applications. Single-crystal X-ray diffraction confirmed that the doped crystals crystallize in the hexagonal system, with slight lattice expansion indicating effective Mn<sup>2</sup>⁺ incorporation. X-ray photoelectron spectroscopy verified the elemental composition and stable divalent oxidation state of manganese, confirming its substitutional incorporation without secondary phase formation. The laser damage threshold analysis revealed a high-power density tolerance of 8.86 GW/cm⁻<sup>2</sup>, demonstrating excellent resistance to intense laser irradiation and suitability for high-power optoelectronic devices. Dielectric investigations showed a moderate dielectric constant with remarkably low dielectric loss at higher frequencies and temperatures, reflecting reduced energy dissipation and enhanced polarization efficiency. Third order nonlinear optical properties were evaluated using the Z-scan technique, yielding an enhanced nonlinear refractive index and a large third order susceptibility of 2.283 × 10⁻<sup>11</sup> esu, significantly exceeding that of conventional KDP crystals. The enhanced NLO response is attributed to Mn-induced electronic polarizability. The combined high laser damage resistance, low dielectric loss, and strong third order nonlinearity establish Mn doped NaKSO₄ as an environmentally benign and efficient photonic material for advanced optoelectronic applications.</p>

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Manganese-doped NaKSO4 single crystals for sustainable high-performance nonlinear optical, superior dielectric and photonic applications

  • 期刊论文

  • 发表日期：

    2026年3月20日

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  • N. Venkatachalam,
  • M. Prabhaharan,
  • D. Dulasimathi,
  • Muthumareeswaran Muthuramamoorthy,
  • S. Thanka Rajan

摘要

Manganese-doped sodium potassium sulfate (Mn: NaKSO4) single crystals were successfully grown by the slow evaporation solution growth technique at room temperature, targeting sustainable material for high-performance nonlinear optical (NLO) and photonic applications. Single-crystal X-ray diffraction confirmed that the doped crystals crystallize in the hexagonal system, with slight lattice expansion indicating effective Mn2⁺ incorporation. X-ray photoelectron spectroscopy verified the elemental composition and stable divalent oxidation state of manganese, confirming its substitutional incorporation without secondary phase formation. The laser damage threshold analysis revealed a high-power density tolerance of 8.86 GW/cm⁻2, demonstrating excellent resistance to intense laser irradiation and suitability for high-power optoelectronic devices. Dielectric investigations showed a moderate dielectric constant with remarkably low dielectric loss at higher frequencies and temperatures, reflecting reduced energy dissipation and enhanced polarization efficiency. Third order nonlinear optical properties were evaluated using the Z-scan technique, yielding an enhanced nonlinear refractive index and a large third order susceptibility of 2.283 × 10⁻11 esu, significantly exceeding that of conventional KDP crystals. The enhanced NLO response is attributed to Mn-induced electronic polarizability. The combined high laser damage resistance, low dielectric loss, and strong third order nonlinearity establish Mn doped NaKSO₄ as an environmentally benign and efficient photonic material for advanced optoelectronic applications.