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<p>The Ti/Cu-metallized AlN substrates hold significant potential for high-power packaging applications. Enhancing the thermal performance of AlN/Ti/Cu multilayered structures relies critically on optimizing thermal transfer at AlN/metal interfaces, where elucidating the contribution mechanism of the AlN/Ti interfacial thermal resistance (ITR) is paramount. This study employed mechanical polishing to modulate AlN substrate surface roughness. Combined with magnetron sputtering to prepare AlN/Ti and AlN/Cu reference groups, a systematic comparison was conducted with the complete AlN/Ti/Cu structure. Experimental results revealed that at an AlN substrate Rq roughness of 383&#xa0;nm, the metallized ceramic substrate exhibited superior thermal transfer performance: the thermal conductivity (TC) of the AlN/Ti/Cu multilayered structure reached 184.23 W·m<sup>−1</sup>·K<sup>−1</sup>, representing an 11% improvement over metallized samples with 14&#xa0;nm surface roughness. Calculated interfacial thermal resistances decreased by 22% and 29% for AlN/Ti and AlN/Cu interfaces, respectively. Notably, the thermal conductivity of AlN/Cu consistently remained lower than that of the AlN/Ti/Cu structure. Analysis indicates that appropriately increasing AlN surface roughness expands the effective contact area at the AlN/Ti interface, thereby providing additional pathways for interfacial thermal transfer. Consequently, adjusting the surface roughness of AlN substrates constitutes an effective strategy for optimizing interfacial thermal transport in multilayered structures, which is essential for addressing thermal management challenges in high-power devices.</p>

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Effects of surface roughness of AlN ceramic substrate on the heat conduction behavior of AlN/Ti/Cu structures

  • 期刊论文

  • 发表日期：

    2026年3月19日

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  • Xiangyi Chen,
  • Yunpeng Yang,
  • Wenbo Li,
  • Licai Fu,
  • Wulin Yang,
  • Jiajun Zhu

摘要

The Ti/Cu-metallized AlN substrates hold significant potential for high-power packaging applications. Enhancing the thermal performance of AlN/Ti/Cu multilayered structures relies critically on optimizing thermal transfer at AlN/metal interfaces, where elucidating the contribution mechanism of the AlN/Ti interfacial thermal resistance (ITR) is paramount. This study employed mechanical polishing to modulate AlN substrate surface roughness. Combined with magnetron sputtering to prepare AlN/Ti and AlN/Cu reference groups, a systematic comparison was conducted with the complete AlN/Ti/Cu structure. Experimental results revealed that at an AlN substrate Rq roughness of 383 nm, the metallized ceramic substrate exhibited superior thermal transfer performance: the thermal conductivity (TC) of the AlN/Ti/Cu multilayered structure reached 184.23 W·m−1·K−1, representing an 11% improvement over metallized samples with 14 nm surface roughness. Calculated interfacial thermal resistances decreased by 22% and 29% for AlN/Ti and AlN/Cu interfaces, respectively. Notably, the thermal conductivity of AlN/Cu consistently remained lower than that of the AlN/Ti/Cu structure. Analysis indicates that appropriately increasing AlN surface roughness expands the effective contact area at the AlN/Ti interface, thereby providing additional pathways for interfacial thermal transfer. Consequently, adjusting the surface roughness of AlN substrates constitutes an effective strategy for optimizing interfacial thermal transport in multilayered structures, which is essential for addressing thermal management challenges in high-power devices.