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<p>All inorganic halide perovskites are known to contain defects, including metal ion and halide vacancies, which are trapping centers for photo-generated charge carriers that promote nonradiative recombination losses and accelerate material degradation. In this work, we investigate an additive engineering strategy using 1,4-diaminoanthraquinone (DAAQ), introduced in 1, 3, and 5&#xa0;mg concentrations to chemically passivate these defects. The electron-rich quinone and amine of DAAQ coordinate with under-coordinated Pb<sup>2+</sup> and Cl<sup>−</sup> ions, leading to passivation of defects and noticeable decreases in defect-related recombination losses. Further comprehensive structural and optical studies reveal that a moderate 3&#xa0;mg DAAQ concentration promotes larger well-ordered grains, enhances light absorption, and sharpens photoluminescence with reduced FWHM. These findings confirm that DAAQ serves as an efficient defect passivation route, significantly improving the optoelectronics performance and structural integrity of CsPbCl<sub>3</sub> perovskites.</p>

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DAAQ-assisted additive engineering for defect passivation and enhanced optoelectronic properties of CsPbCl3 perovskite

  • 期刊论文

  • 发表日期：

    2026年3月24日

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  • Seema Mourya,
  • Divya Bhengra,
  • Shailendra Kumar Sharma

摘要

All inorganic halide perovskites are known to contain defects, including metal ion and halide vacancies, which are trapping centers for photo-generated charge carriers that promote nonradiative recombination losses and accelerate material degradation. In this work, we investigate an additive engineering strategy using 1,4-diaminoanthraquinone (DAAQ), introduced in 1, 3, and 5 mg concentrations to chemically passivate these defects. The electron-rich quinone and amine of DAAQ coordinate with under-coordinated Pb2+ and Cl− ions, leading to passivation of defects and noticeable decreases in defect-related recombination losses. Further comprehensive structural and optical studies reveal that a moderate 3 mg DAAQ concentration promotes larger well-ordered grains, enhances light absorption, and sharpens photoluminescence with reduced FWHM. These findings confirm that DAAQ serves as an efficient defect passivation route, significantly improving the optoelectronics performance and structural integrity of CsPbCl3 perovskites.