Achieving high energy storage density and excellent temperature stability in K0.5Bi0.5TiO3-based ceramics under low electric fields
摘要
Dielectric ceramics with high energy storage density under low electric fields is of great significance for advancing next-generation energy storage devices toward safer, more economical, and more compact designs. In this study, we propose a B-site ion co-doping strategy by introducing Mg2⁺ and Nb5⁺ into lead-free ferroelectric 0.6K0.5Bi0.5TiO3-0.4Sr0.7Bi0.2TiO3 (KBST) ceramic to regulate energy storage performance. A series of (0.6K0.5Bi0.5–0.4Sr0.7Bi0.2) Ti(1-x)Mgx/3Nb2x/3O3 (x = 0, 0.01, 0.02, 0.03) ceramics was designed and fabricated via solid-state reaction method. In addition, the influence of doping on phase structure, microstructure, dielectric properties, and energy storage behavior were systematically investigated. As a result, both the relaxor behavior and energy density were enhanced significantly compared with undoped ceramic. Notably, a recoverable energy density (Wrec) of 2.32 J/cm3 and an energy efficiency (η) of 79.3% are obtained simultaneously in x = 0.02 ceramic under a low electric field of 222 kV/cm, along with excellent temperature stability from 30 to 120 °C and fatigue resistance after 105 cycling. This work provides an effective material design strategy for developing high-performance lead-free energy storage ceramics suitable for operation under low electric fields.