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<p>This work presents the investigation of RF magnetron-sputtered aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) nanocomposites deposited at a low chamber pressure of 6 × 10<sup>–3</sup>&#xa0;mbar and their novel application in amorphous silicon-based PIN and NIP solar cells fabricated on a Corning/Ag substrate. The objective of this study is to optimize the sputtering and annealing conditions of RF-sputtered Al<sub>2</sub>O<sub>3</sub> films to obtain film quality comparable to that reported for commonly used techniques, such as ALD, and subsequently to explore the dual role of Al<sub>2</sub>O<sub>3</sub> as a passivation and antireflection layer in a-Si:H thin-film solar cells. To characterize the Al<sub>2</sub>O<sub>3</sub> films, samples were prepared at 200&#xa0;°C. The as-deposited samples were then annealed at 300°, 350°, and 400&#xa0;°C, respectively. Various characterizations were used to assess the structural, morphological, optical, and electrical properties of the deposited Al<sub>2</sub>O<sub>3</sub> nanocomposites. The optical and electrical (capacitance–voltage) characteristics confirm the antireflection property and the presence of negative fixed charges in the deposited samples. All the samples exhibit a negative fixed charge in the range of 10<sup>12</sup>&#xa0;cm<sup>−2</sup>. The sample annealed at 350&#xa0;°C is appropriate for device application because it has a greater negative fixed charge of -0.92 × 10<sup>12</sup>&#xa0;cm<sup>−2</sup> than the other samples. Based on the optimized Al<sub>2</sub>O<sub>3</sub> films, the application of RF-sputtered Al<sub>2</sub>O<sub>3</sub> was investigated in hydrogenated amorphous silicon (a-Si:H) thin-film solar cells with PIN and NIP structures for passivation and antireflection, respectively, without emphasizing overall efficiency enhancement of the PIN or NIP cells. The motive is purely to highlight improvements enabled by Al<sub>2</sub>O<sub>3</sub> application: when placed directly below the p-type layer, it boosts PIN device efficiency from 2.6 to 2.9%; applied at the top of the p-type layer in the NIP structure, it increases efficiency from 2.6 to 4.3%. Additionally, the incorporation of an ITO buffer layer above the Ag back contact in the NIP device enhances the fill factor, leading to an improvement in overall efficiency from 4.3 to 5.4%.</p>

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Dual-function Al2O3 thin films via low-pressure deposition for a-Si:H solar cells: electrical characterization and antireflection effect

  • 期刊论文

  • 发表日期：

    2026年3月11日

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  • Himangshu Deka,
  • Manvendra Singh Gangwar,
  • Arun Kumar Sunaniya

摘要

This work presents the investigation of RF magnetron-sputtered aluminum oxide (Al2O3) nanocomposites deposited at a low chamber pressure of 6 × 10–3 mbar and their novel application in amorphous silicon-based PIN and NIP solar cells fabricated on a Corning/Ag substrate. The objective of this study is to optimize the sputtering and annealing conditions of RF-sputtered Al2O3 films to obtain film quality comparable to that reported for commonly used techniques, such as ALD, and subsequently to explore the dual role of Al2O3 as a passivation and antireflection layer in a-Si:H thin-film solar cells. To characterize the Al2O3 films, samples were prepared at 200 °C. The as-deposited samples were then annealed at 300°, 350°, and 400 °C, respectively. Various characterizations were used to assess the structural, morphological, optical, and electrical properties of the deposited Al2O3 nanocomposites. The optical and electrical (capacitance–voltage) characteristics confirm the antireflection property and the presence of negative fixed charges in the deposited samples. All the samples exhibit a negative fixed charge in the range of 1012 cm−2. The sample annealed at 350 °C is appropriate for device application because it has a greater negative fixed charge of -0.92 × 1012 cm−2 than the other samples. Based on the optimized Al2O3 films, the application of RF-sputtered Al2O3 was investigated in hydrogenated amorphous silicon (a-Si:H) thin-film solar cells with PIN and NIP structures for passivation and antireflection, respectively, without emphasizing overall efficiency enhancement of the PIN or NIP cells. The motive is purely to highlight improvements enabled by Al2O3 application: when placed directly below the p-type layer, it boosts PIN device efficiency from 2.6 to 2.9%; applied at the top of the p-type layer in the NIP structure, it increases efficiency from 2.6 to 4.3%. Additionally, the incorporation of an ITO buffer layer above the Ag back contact in the NIP device enhances the fill factor, leading to an improvement in overall efficiency from 4.3 to 5.4%.