Anisotropic wet etching with ethanol-assisted KOH for cost-effective high-performance silicon solar cells
摘要
Surface texturing of monocrystalline silicon (mono-Si) wafers is a key strategy for reducing optical losses and enhancing photovoltaic efficiency. In this work, p-type mono-Si (100) wafers were cleaned via a two-step RCA process and subjected to anisotropic wet chemical etching in 5 wt% potassium hydroxides (KOH) with ethanol as a surfactant at 80 °C for different durations. Optical microscopy and SEM revealed a progression from saw damage surfaces to uniform upright pyramidal texture. UV–Vis-Nir spectroscopy showed a reduction in average reflectance from 22.2% (raw) to 7.8% (20 min), correlated with improved light trapping. XRD confirmed preserved crystallinity, while minority carrier lifetime decreased from 18.7 µm to 14.2 µm due to etch-induced recombination centers. PC1D simulation, incorporating measured reflectance and lifetime, predicted an increase in short-circuit current and yielded an efficiency improvement up to 20.7%. These results demonstrate that controlled KOH-ethanol texturing achieves an optimal balance between optical enhancement and electronic performance, offering a cost-effective pathway to high-efficiency silicon solar cells.