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<p>Arsenic trioxide (As<sub>2</sub>O<sub>3</sub>) and gallium nitride (GaN) nanostructures doped with silicon monoxide (SiO) nanoparticles were synthesized through an optimized sol–gel approach and systematically examined for their potential to improve the efficiency of inert photovoltaic cells (IPCs). Detailed structural, morphological, and compositional characterizations were performed using X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD profiles confirmed SiO crystallization, highlighted by a distinct (002) reflection at 2<i>θ</i> = 26.70°, while FTIR spectra revealed characteristic β-phase vibrational features at 783.56&#xa0;cm<sup>−1</sup> and 1033.71&#xa0;cm<sup>−1</sup>. Elemental mapping via EDS demonstrated uniform distribution and successful incorporation of dopant species. Photovoltaic performance was assessed using dye-sensitized solar cells (DSSCs), noting that arsenic incorporation has previously enabled efficiencies up to 22.3% in CdSeTe-based devices. Additionally, tandem architectures integrating InGaN layers with silicon coatings have achieved efficiencies surpassing 40%, with In₀.₃₃Ga₀.₆₇N/Si configurations reaching 42.43%. Collectively, these results underscore that SiO doping significantly modulates the optoelectronic behavior of As₂O₃ and GaN nanostructures, thereby presenting a promising strategy for enhancing IPC efficiency through engineered catalytic interfaces.</p>

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Tailoring photovoltaic properties through As2O3 and GaN doping in silicon monoxide

  • 期刊论文

  • 发表日期：

    2026年3月21日

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  • Shalini Singh,
  • Vijay Prakash Jain,
  • Vipin Kumar Singh,
  • Gautam Jaiswar

摘要

Arsenic trioxide (As2O3) and gallium nitride (GaN) nanostructures doped with silicon monoxide (SiO) nanoparticles were synthesized through an optimized sol–gel approach and systematically examined for their potential to improve the efficiency of inert photovoltaic cells (IPCs). Detailed structural, morphological, and compositional characterizations were performed using X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD profiles confirmed SiO crystallization, highlighted by a distinct (002) reflection at 2θ = 26.70°, while FTIR spectra revealed characteristic β-phase vibrational features at 783.56 cm−1 and 1033.71 cm−1. Elemental mapping via EDS demonstrated uniform distribution and successful incorporation of dopant species. Photovoltaic performance was assessed using dye-sensitized solar cells (DSSCs), noting that arsenic incorporation has previously enabled efficiencies up to 22.3% in CdSeTe-based devices. Additionally, tandem architectures integrating InGaN layers with silicon coatings have achieved efficiencies surpassing 40%, with In₀.₃₃Ga₀.₆₇N/Si configurations reaching 42.43%. Collectively, these results underscore that SiO doping significantly modulates the optoelectronic behavior of As₂O₃ and GaN nanostructures, thereby presenting a promising strategy for enhancing IPC efficiency through engineered catalytic interfaces.