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<p>Hybrid metal–polymer–two-dimensional (2D) semiconductor heterojunctions offer an effective platform for tailoring interface-controlled electrical and dielectric properties. In this study, Al/PANI–Silicene/n-Si Schottky diodes were fabricated and investigated using current–voltage, capacitance–voltage, admittance, and impedance spectroscopy over a wide frequency range. The devices exhibit clear rectifying behavior with an enhanced effective barrier height and reduced reverse leakage current, indicating relatively improved interface quality. Frequency-dependent measurements reveal strong dispersion in capacitance and dielectric loss at low frequencies, which gradually diminish at higher frequencies. Impedance and Nyquist analyses show a single dominant interfacial response, while modulus and dielectric representations indicate non-ideal relaxation behavior associated with a distributed spectrum of interface states. The extracted electrical parameters demonstrate that the incorporation of a Silicene interlayer significantly modifies the interfacial response of PANI-based Schottky junctions. These results provide a measurement-driven understanding of charge transport and dielectric behavior in polymer–2D–Si heterostructures and highlight their potential for advanced electronic device applications.</p>

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Admittance behavior and dielectric loss mechanisms in Al/PANI–Silicene/n‑Si heterojunctions

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月5日

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  • Abdullah Karaca,
  • Elif Marıl,
  • Ali Akbar Hussaini,
  • Murat Yıldırım,
  • Nevin Tasaltın,
  • Dilber Esra Yıldız

摘要

Hybrid metal–polymer–two-dimensional (2D) semiconductor heterojunctions offer an effective platform for tailoring interface-controlled electrical and dielectric properties. In this study, Al/PANI–Silicene/n-Si Schottky diodes were fabricated and investigated using current–voltage, capacitance–voltage, admittance, and impedance spectroscopy over a wide frequency range. The devices exhibit clear rectifying behavior with an enhanced effective barrier height and reduced reverse leakage current, indicating relatively improved interface quality. Frequency-dependent measurements reveal strong dispersion in capacitance and dielectric loss at low frequencies, which gradually diminish at higher frequencies. Impedance and Nyquist analyses show a single dominant interfacial response, while modulus and dielectric representations indicate non-ideal relaxation behavior associated with a distributed spectrum of interface states. The extracted electrical parameters demonstrate that the incorporation of a Silicene interlayer significantly modifies the interfacial response of PANI-based Schottky junctions. These results provide a measurement-driven understanding of charge transport and dielectric behavior in polymer–2D–Si heterostructures and highlight their potential for advanced electronic device applications.