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<p>Due to the suppression of band-edge Auger recombination, lead selenide (PbSe) is a critical material for uncooled infrared detection at room temperature. However, the optoelectronic performance of PbSe detectors exhibits significant temperature sensitivity, often deviating from room-temperature characteristics when operated in cryogenic environments. In this study, we fabricated PbSe photodetectors via vapor phase deposition (VPD) with both unpatterned and patterned architectures to evaluate their compatibility with standard microfabrication processes and their intrinsic temperature-dependent behaviors. Unpatterned devices on sapphire substrates demonstrate superior performance, achieving responsivity up to 2.52 A/W and specific detectivity of 1.52 × 10<sup>10</sup> Jones at 2700&#xa0;nm. In contrast, patterned devices on Si/SiO<sub>2</sub> substrates suffered significant performance degradation due to process-induced surface defects. Temperature-dependent measurements on unpatterned devices reveal a non-monotonic photocurrent trend, with a peak in the 150–200&#xa0;K range. This phenomenon is attributed to the synergistic competition among thermally activated transport, lattice scattering, and phonon-assisted indirect Auger recombination. These findings highlight the critical role of device architecture and processing conditions in preserving the intrinsic properties of VPD-grown PbSe and provide guidance for optimizing the performance of cryogenic infrared detection systems.</p>

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Non-monotonic low-temperature photocurrent in VPD-PbSe photodetectors

  • 期刊论文

  • 发表日期：

    2026年3月7日

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  • Kerun Chen,
  • Xu Gao,
  • Dong Yang,
  • Qi Yang,
  • Chongqian Leng,
  • Dahua Zhou,
  • Deping Huang,
  • Changbin Nie,
  • Jijun Qiu,
  • Jun Shen

摘要

Due to the suppression of band-edge Auger recombination, lead selenide (PbSe) is a critical material for uncooled infrared detection at room temperature. However, the optoelectronic performance of PbSe detectors exhibits significant temperature sensitivity, often deviating from room-temperature characteristics when operated in cryogenic environments. In this study, we fabricated PbSe photodetectors via vapor phase deposition (VPD) with both unpatterned and patterned architectures to evaluate their compatibility with standard microfabrication processes and their intrinsic temperature-dependent behaviors. Unpatterned devices on sapphire substrates demonstrate superior performance, achieving responsivity up to 2.52 A/W and specific detectivity of 1.52 × 1010 Jones at 2700 nm. In contrast, patterned devices on Si/SiO2 substrates suffered significant performance degradation due to process-induced surface defects. Temperature-dependent measurements on unpatterned devices reveal a non-monotonic photocurrent trend, with a peak in the 150–200 K range. This phenomenon is attributed to the synergistic competition among thermally activated transport, lattice scattering, and phonon-assisted indirect Auger recombination. These findings highlight the critical role of device architecture and processing conditions in preserving the intrinsic properties of VPD-grown PbSe and provide guidance for optimizing the performance of cryogenic infrared detection systems.